HITTITE HMC344_09

HMC344
v06.0709
SWITCHES - CHIP
4
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Typical Applications
Features
The HMC344 is ideal for:
Broadband Performance: DC - 8 GHz
• Telecom Infrastructure
Non-Reflective Topology
• Microwave Radio & VSAT
Low Insertion Loss: 1.8 dB @ 6 GHz
• Military & Space
Integrated 2:4 TTL Decoder
• Test Instrumentation
Small Size: 1.08 x 1.05 x 0.10 mm
Functional Diagram
General Description
The HMC344 is a broadband non-reflective GaAs
MESFET SP4T switch chip. Covering DC to 8 GHz,
this switch offers high isolation, low insertion loss,
and a compact form factor. This switch also includes
an on board binary decoder circuit which reduces
the number of required logic control lines to two. The
switch operates using a negative control voltage of
0/-5V, and requires a fixed bias of -5V. All data is tested
with the chip in a 50 Ohm test fixture connected via
0.025 mm (1 mil) diameter wire bonds of minimal length
0.31 mm (12 mils). This SP4T switch is also available
in SMT packaged form as the HMC344LC3.
Electrical Specifi cations, TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System
Parameter
Frequency
Typ.
Max.
Units
1.8
1.9
2.1
2.2
dB
dB
Insertion Loss
Isolation
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
44
37
34
30
49
42
39
35
dB
dB
dB
dB
10
7
14
10
dB
dB
Return Loss
“On State”
DC - 2.0 GHz
DC - 8.0 GHz
Return Loss
“Off State”
DC - 8.0 GHz
7
10
dB
Input Power for 1 dB Compression
0.5 - 8.0 GHz
17
21
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone)
0.5 - 8.0 GHz
37
40
dBm
35
150
ns
ns
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
4 - 20
Min.
DC - 6.0 GHz
DC - 8.0 GHz
DC - 8.0 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Insertion Loss vs. Temperature
Isolation
0
+ 25C
+ 85C
- 55C
0
-1
-40
4
-60
-3
-80
0
1
2
3
4
5
6
FREQUENCY (GHz)
7
8
0
9
Return Loss
1
2
3
4
5
6
FREQUENCY (GHz)
7
8
9
0.1 and 1 dB Input Compression Point
25
INPUT COMPRESSION POINT (dBm)
0
RFC
RF1, RF2, RF3, RF4 ON
RF1, RF2, RF3, RF4 OFF
-5
-10
-15
1dB Compression Point
0.1dB Compression Point
23
21
SWITCHES - CHIP
-2
-4
19
17
15
-20
0
1
2
3
4
5
6
7
8
9
2
3
4
FREQUENCY (GHz)
5
6
7
8
9
FREQUENCY (GHz)
Input Third Order Intercept Point
INPUT THIRD ORDER INTERCEPT (dBm)
RETURN LOSS (dB)
RF1
RF2
RF3
RF4
-20
ISOLATION (dB)
INSERTION LOSS (dB)
1
45
43
41
39
RF1
RF2
RF3
RF4
37
35
1
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 21
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Absolute Maximum Ratings
SWITCHES - CHIP
4
4 - 22
Bias Voltage Range (Vee)
-7V
Control Voltage Range (A & B)
Vee -0.5V to +1V
Channel Temperature
150 °C
Thermal Resistance
(Insertion Loss Path)
143 °C/W
Thermal Resistance
(Terminated Path)
1,030 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Maximum Input Power
+24 dBm
ESD Sensitivity (HBM)
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Truth Table
Control Input
Signal Path State
A
B
RF COM to:
High
High
RF1
Low
High
RF2
High
Low
RF3
Low
Low
RF4
Bias Voltage & Current
Vee Range = -5 Vdc ±10%
Vee
(V)
Idd (Typ)
(mA)
Idd (Max)
(mA)
-5
3
6
TTL/CMOS Control Voltages
State
Bias Condition
Low
-3V to 0 Vdc @ 60 uA Typ.
High
-5 to 4.2 Vdc @ 5 uA Typ.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Outline Drawing
SWITCHES - CHIP
4
Die Packaging Information [1]
NOTES:
1. DIMENSIONS IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS 0.004”.
Standard
Alternate
WP-2 (Waffle Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3. TYPICAL BOND PAD IS 0.004” SQUARE.
4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 23
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Pad Descriptions
Pad Number
Function
Description
1, 2, 3,
4, 5, 10
RF4, RFC, RF1,
RF2, RF3
These pads are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
6
A
See truth table and control voltage table.
7
B
See truth table and control voltage table.
8
Vee
Supply Voltage -5.0 Vdc ±10%
9, Die
Bottom
GND
Die bottom and pad must be connected to RF/DC ground.
Interface Schematic
SWITCHES - CHIP
4
TTL Interface Circuit
Note:
Control inputs A and B can be driven directly with TTL logic with -5 Volts
applied to the HCT logic gates Vee pin and to Vee (pad) of the RF Switch.
4 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Assembly Diagram
SWITCHES - CHIP
4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 25