Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC344 v06.0709 SWITCHES - CHIP 4 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Typical Applications Features The HMC344 is ideal for: Broadband Performance: DC - 8 GHz • Telecom Infrastructure Non-Reflective Topology • Microwave Radio & VSAT Low Insertion Loss: 1.8 dB @ 6 GHz • Military & Space Integrated 2:4 TTL Decoder • Test Instrumentation Small Size: 1.08 x 1.05 x 0.10 mm Functional Diagram General Description The HMC344 is a broadband non-reflective GaAs MESFET SP4T switch chip. Covering DC to 8 GHz, this switch offers high isolation, low insertion loss, and a compact form factor. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines to two. The switch operates using a negative control voltage of 0/-5V, and requires a fixed bias of -5V. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). This SP4T switch is also available in SMT packaged form as the HMC344LC3. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System Parameter Frequency Typ. Max. Units 1.8 1.9 2.1 2.2 dB dB Insertion Loss Isolation DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8.0 GHz 44 37 34 30 49 42 39 35 dB dB dB dB 10 7 14 10 dB dB Return Loss “On State” DC - 2.0 GHz DC - 8.0 GHz Return Loss “Off State” DC - 8.0 GHz 7 10 dB Input Power for 1 dB Compression 0.5 - 8.0 GHz 17 21 dBm Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone) 0.5 - 8.0 GHz 37 40 dBm 35 150 ns ns Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 4 - 20 Min. DC - 6.0 GHz DC - 8.0 GHz DC - 8.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Insertion Loss vs. Temperature Isolation 0 + 25C + 85C - 55C 0 -1 -40 4 -60 -3 -80 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 0 9 Return Loss 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 0.1 and 1 dB Input Compression Point 25 INPUT COMPRESSION POINT (dBm) 0 RFC RF1, RF2, RF3, RF4 ON RF1, RF2, RF3, RF4 OFF -5 -10 -15 1dB Compression Point 0.1dB Compression Point 23 21 SWITCHES - CHIP -2 -4 19 17 15 -20 0 1 2 3 4 5 6 7 8 9 2 3 4 FREQUENCY (GHz) 5 6 7 8 9 FREQUENCY (GHz) Input Third Order Intercept Point INPUT THIRD ORDER INTERCEPT (dBm) RETURN LOSS (dB) RF1 RF2 RF3 RF4 -20 ISOLATION (dB) INSERTION LOSS (dB) 1 45 43 41 39 RF1 RF2 RF3 RF4 37 35 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 21 HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Absolute Maximum Ratings SWITCHES - CHIP 4 4 - 22 Bias Voltage Range (Vee) -7V Control Voltage Range (A & B) Vee -0.5V to +1V Channel Temperature 150 °C Thermal Resistance (Insertion Loss Path) 143 °C/W Thermal Resistance (Terminated Path) 1,030 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Maximum Input Power +24 dBm ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Truth Table Control Input Signal Path State A B RF COM to: High High RF1 Low High RF2 High Low RF3 Low Low RF4 Bias Voltage & Current Vee Range = -5 Vdc ±10% Vee (V) Idd (Typ) (mA) Idd (Max) (mA) -5 3 6 TTL/CMOS Control Voltages State Bias Condition Low -3V to 0 Vdc @ 60 uA Typ. High -5 to 4.2 Vdc @ 5 uA Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Outline Drawing SWITCHES - CHIP 4 Die Packaging Information [1] NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.004”. Standard Alternate WP-2 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3. TYPICAL BOND PAD IS 0.004” SQUARE. 4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 23 HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Pad Descriptions Pad Number Function Description 1, 2, 3, 4, 5, 10 RF4, RFC, RF1, RF2, RF3 These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required. 6 A See truth table and control voltage table. 7 B See truth table and control voltage table. 8 Vee Supply Voltage -5.0 Vdc ±10% 9, Die Bottom GND Die bottom and pad must be connected to RF/DC ground. Interface Schematic SWITCHES - CHIP 4 TTL Interface Circuit Note: Control inputs A and B can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to Vee (pad) of the RF Switch. 4 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v06.0709 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8 GHz Assembly Diagram SWITCHES - CHIP 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 25