HMC490LP5 / 490LP5E v03.1109 LOW NOISE AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Typical Applications Features The HMC490LP5(E) is ideal for: Noise Figure: 2.5 dB • Point-to-Point Radios P1dB Output Power: +25 dBm • Point-to-Multi-Point Radios Gain: 23 dB • VSAT Output IP3: +34 dBm 3 +5V Supply • Military EW, ECM & C I 50 Ohm Matched Input/Output 32 Lead 5x5mm SMT Package: 25mm2 Functional Diagram General Description The HMC490LP5(E) is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier which operates between 12 and 16 GHz. The HMC490LP5(E) provides 23 dB of gain, 2.5 dB noise figure and an output IP3 of +34 dBm from a +5V supply voltage. This versatile amplifier combines excellent, stable +25 dBm P1dB output power with very low noise figure making it ideal for receive and transmit applications. The amplifier is packaged in a leadless 5x5 mm QFN surface mount package. Electrical Specifi cations, TA = +25° C, Vdd = 5V, Idd = 200 mA* Parameter Min. Frequency Range Gain Typ. Max. 12 - 16 20 GHz 23 dB Gain Variation Over Temperature 0.03 0.04 dB/ °C Noise Figure 2.5 3.5 dB Input Return Loss 8 Output Return Loss 8 dB 25 dBm 27 dBm Output Third Order Intercept (IP3) 34 dBm Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 200 mA Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 22 * Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical. 8 - 130 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Broadband Gain & Return Loss 8 Gain vs. Temperature 30 28 26 24 S21 S11 S22 10 GAIN (dB) RESPONSE (dB) 20 0 -10 22 20 18 +25 C 16 +85 C 14 -40 C 12 10 -20 8 8 10 12 14 16 18 20 10 11 12 FREQUENCY (GHz) Input Return Loss vs. Temperature 14 15 16 17 18 Output Return Loss vs. Temperature 0 0 -2 +25 C +85 C -40 C -4 +25 C +85 C -40 C -4 RETURN LOSS (dB) RETURN LOSS (dB) 13 FREQUENCY (GHz) -6 -8 -10 -8 -12 LOW NOISE AMPLIFIERS - SMT 30 -16 -12 -20 -14 10 11 12 13 14 15 16 17 18 10 11 12 Noise Figure vs. Temperature 14 15 16 17 18 16 17 18 Output IP3 vs. Temperature 40 10 35 8 30 +25 C +85 C -40 C 6 IP3 (dBm) NOISE FIGURE (dB) 13 FREQUENCY (GHz) FREQUENCY (GHz) 4 +25 C +85 C -40 C 25 20 2 15 0 10 10 11 12 13 14 15 FREQUENCY (GHz) 16 17 18 10 11 12 13 14 15 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 131 HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Psat vs. Temperature 32 32 28 28 24 24 20 20 16 Psat (dBm) P1dB (dBm) P1dB vs. Temperature +25 C +85 C -40 C 12 16 8 4 4 0 +25 C +85 C -40 C 12 8 0 10 11 12 13 14 15 16 17 18 10 11 12 FREQUENCY (GHz) Gain, Noise Figure & OIP3 vs. Supply Voltage @ 14 GHz, Idd= 200 mA Pout (dBm), GAIN (dB), PAE (%) GAIN (dB), IP3 (dBm) 4 32 3 28 2 1 24 0 20 3.5 4 4.5 15 16 17 18 30 Noise Figure Gain IP3 14 Power Compression @ 14 GHz 5 40 36 13 FREQUENCY (GHz) NOISE FIGURE (dB) LOW NOISE AMPLIFIERS - SMT 8 5 25 20 15 10 Pout (dBm) Gain (dB) PAE (%) 5 0 -20 5.5 -15 -10 -5 0 5 10 INPUT POWER (dBm) Vdd (V) Gain, Noise Figure & IP3 vs. Supply Current @ 14 GHz, Vdd= 5V* Reverse Isolation vs. Temperature 34 5 30 4 0 3 22 2 18 14 100 1 Gain IP3 125 ISOLATION (dB) 26 NOISE FIGURE (dB) GAIN (dB), IP3 (dBm) -10 +25 C +85 C -40 C -20 -30 -40 -50 -60 Noise Figure 150 Idd (mA) 175 0 200 -70 10 11 12 13 14 15 16 FREQUENCY (GHz) * Idd is controlled by varying Vgg 8 - 132 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 17 18 HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -4 to 0V +3.0 140 RF Input Power (RFIN)(Vdd = +5V) +10 dBm +3.5 154 Channel Temperature 175 °C +4.0 168 Continuous Pdiss (T = 85 °C) (derate 29 mW/°C above 85 °C) 2.65 W +4.5 188 +5.0 200 Thermal Resistance (channel to ground paddle) 34 °C/W +5.5 208 Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 8 LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC490LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC490LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H490 XXXX [2] H490 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 133 HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz LOW NOISE AMPLIFIERS - SMT 8 8 - 134 Pin Descriptions Pin Number Function Description 1, 2, 6 - 12, 14 - 19, 23, 24, 26, 27, 29 - 31 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 3, 5, 20, 22 GND Package bottom must also be connected to RF/DC ground. 4 RFIN This pad is AC coupled and matched to 50 Ohms. 13 Vgg Gate control for amplifier. Adjust to achieve Idd of 200 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.01 μF are required. 21 RFOUT This pad is AC coupled and matched to 50 Ohms. 25, 28, 32 Vdd3, 2, 1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 μF are required. Interface Schematic Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC490LP5 / 490LP5E v03.1109 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz 8 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 108402 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J8 DC Pin C1 - C4 1000 pF Capacitor, 0402 Pkg. C5 - C8 4.7 μF Capacitor, Tantalum U1 HMC490LP5 / HMC490LP5E PCB [2] 108540 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 135