HMC562 v04.1108 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Typical Applications Features The HMC562 wideband driver is ideal for: P1dB Output Power: +18 dBm • Military & Space Gain: 12.5 dB • Test Instrumentation Output IP3: +27 dBm • Fiber Optics Supply Voltage: +8V @ 80 mA 50 Ohm Matched Input/Output Die Size: 3.12 x 1.42 x 0.1 mm Functional Diagram General Description The HMC562 is a GaAs MMIC PHEMT Distributed Driver Amplifier die which operates between 2 and 35 GHz. The amplifier provides 12.5 dB of gain, +19 dBm output IP3 and +12 dBm of output power at 1 dB gain compression while requiring 80 mA from a +8V supply. The HMC562 is ideal for EW, ECM and radar driver amplifier applications. The HMC562 amplifier I/O’s are DC blocked and internally matched to 50 Ohms facilitating integration into MultiChip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd= +8V, Idd= 80 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 15.0 9.5 ±0.4 Gain Variation Over Temperature 0.01 Max. Min. 15.0 - 27.0 12.5 Gain Flatness Typ. 8.5 0.01 Max. 27.0 - 35.0 12 7 ±0.35 0.02 Typ. 0.02 GHz 10 dB ±1.3 dB 0.02 0.03 dB/ °C Input Return Loss 14 13 10 Output Return Loss 16 15 12 dB 14 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 15 18 14 17 10 dB 21.5 20 16 dBm Output Third Order Intercept (IP3) 27 24 22 dBm Noise Figure 3 3.5 5 dB Supply Current (Idd) (Vdd= 8V, Vgg = -0.8V Typ.) 80 100 80 100 80 100 * Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical. 2 - 34 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC562 v04.1108 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Gain & Return Loss Gain vs. Temperature 15 14 10 12 S21 S11 S22 10 -5 -10 8 +25C +85C -55C 6 -15 4 -20 2 0 -25 0 5 10 15 20 25 30 35 0 40 5 10 Input Return Loss vs. Temperature 25 30 35 0 +25C +85C -55C +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 20 Output Return Loss vs. Temperature 0 -10 -15 -20 -10 -15 -20 -25 -25 0 5 10 15 20 25 30 35 0 5 10 FREQUENCY (GHz) 15 20 25 30 35 30 35 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 7 6 -10 +25C +85C -55C -20 NOISE FIGURE (dB) ISOLATION (dB) 15 FREQUENCY (GHz) FREQUENCY (GHz) -30 -40 -50 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 0 GAIN (dB) RESPONSE (dB) 5 2 +25C +85C -55C 5 4 3 2 1 -60 0 0 4 8 12 FREQUENCY (GHz) 16 20 0 5 10 15 20 25 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 35 HMC562 v04.1108 Psat vs. Temperature 24 24 22 22 20 20 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 18 16 14 16 +25C +85C -55C 12 10 10 0 5 10 15 20 25 30 35 0 5 10 FREQUENCY (GHz) 30 25 +25C +85C -55C 15 5 10 15 20 25 30 35 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) IP3 (dBm) 35 0 20 25 30 35 Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg 40 20 15 FREQUENCY (GHz) Output IP3 vs. Temperature 30 Gain P1dB 25 Psat IP3 20 15 10 7.5 8 8.5 Vdd Supply Voltage (V) FREQUENCY (GHz) Power Compression @ 10 GHz Power Compression @ 30 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 20 Pout Gain PAE 20 16 12 8 4 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) 2 - 36 18 14 +25C +85C -55C 12 Pout (dBm), GAIN (dB), PAE (%) DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz 10 12 14 16 Pout Gain PAE 16 12 8 4 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 12 HMC562 v04.1108 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Drain Bias Voltage (Vdd) +10 Vdc Gate Bias Voltage (Vgg) -2.0 to 0 Vdc RF Input Power (RFIN)(Vdd = +10 Vdc) +23 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 26 mW/°C above 85 °C) 2.3 W Thermal Resistance (channel to die bottom) 39 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +7.5 79 +8 80 +8.5 81 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Absolute Maximum Ratings 2 - 37 HMC562 v04.1108 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Outline Drawing DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 2 - 38 Die Packaging Information [1] Standard Alternate GP-2 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC562 v04.1108 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Pad Descriptions Function Description 1 IN This pad is AC coupled and matched to 50 Ohms 2 Vdd Power supply voltage for amplifier. External bypass capacitors are required. 3 OUT This pad is AC coupled and matched to 50 Ohms 4 Vgg Gate control for amplifier. External bypass capacitors are required. Please follow “MMIC Amplifier Biasing Procedure” application note. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Pad Number 2 - 39 HMC562 v04.1108 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Assembly Diagram DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 2 - 40 Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC562 v04.1108 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 2 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. DRIVER & GAIN BLOCK AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 41