HMC616LP3 / 616LP3E v02.0610 Amplifiers - Low Noise - SMT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HMC616LP3(E) is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 24 dB • BTS & Infrastructure High Output IP3: +37 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio 50 Ohm Matched Input/Output • DAB Receivers 16 Lead 3x3mm QFN Package: 9 mm2 Functional Diagram General Description The HMC616LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 175 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC616LP3(E) shares the same package and pinout with the HMC617LP3(E) and HMC618LP3(E) LNAs. The HMC616LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC616LP3(E) offers improved noise figure versus the previously released HMC356LP3(E). Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms* Parameter Vdd = +3V Min. Frequency Range Gain Typ. Max. Min. 175 - 230 20 Vdd = +5V Typ. Max. Min. 230 - 660 22.5 15 Gain Variation Over Temperature Typ. Max. Min. 175 - 230 20 21 15 dB/ °C 10 16 12 14 dB Output Return Loss 9 10 9 10 dB 8.5 0.8 dB 0.005 0.5 Saturated Output Power (Psat) 0.5 MHz 21 Noise Figure 8 0.8 Units Input Return Loss Output Power for 1 dB Compression (P1dB) 0.5 Max. 230 - 660 24 0.002 0.8 Typ. 0.5 0.8 dB 11 10 15 11 15 14 19 dBm 13 11 15.5 12.5 17.5 15.5 19.5 dBm 37 dBm Output Third Order Intercept (IP3) 20 Supply Current (Idd) 30 30 45 30 32 45 90 115 90 115 mA * Rbias resistor sets current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Broadband Gain & Return Loss 20 S21 22 10 Vdd= 5V Vdd= 3V 5 GAIN (dB) RESPONSE (dB) 15 0 S22 -5 +25C +85C - 40C 18 -10 16 -15 -20 S11 -25 14 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 1.2 0.2 1.4 Gain vs. Temperature [2] 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Input Return Loss vs. Temperature [1] 24 0 RETURN LOSS (dB) 22 GAIN (dB) 20 20 +25C +85C - 40C 18 16 14 +25C +85C - 40C -5 -10 Amplifiers - Low Noise - SMT 24 25 0.2 7 Gain vs. Temperature [1] -15 -20 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Output Return Loss vs. Temperature [1] 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Reverse Isolation vs. Temperature [1] 0 0 REVERSE ISOLATION (dB) RETURN LOSS (dB) -5 +25C +85C - 40C -5 -10 -15 -10 +25C +85C - 40C -15 -20 -25 -30 -35 -40 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC616LP3 / 616LP3E v02.0610 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Noise Figure vs. Temperature [1] P1dB vs. Temperature 24 22 Vdd=5V Vdd=3V 0.8 20 0.7 P1dB (dBm) NOISE FIGURE (dB) 0.9 +85C 0.6 0.5 0.4 Vdd=5V 18 16 Vdd=3V 14 +25 C +25 C +85 C - 40 C 12 0.3 -40C 0.2 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 10 0.2 0.7 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) Psat vs. Temperature Output IP3 vs. Temperature 24 Vdd=5V 40 22 36 Vdd=5V IP3 (dBm) 20 Psat (dBm) Amplifiers - Low Noise - SMT 1 18 16 14 28 +25 C +85 C - 40 C 12 24 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.2 0.7 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz Output IP3 and Supply Current vs. Supply Voltage @ 500 MHz 40 140 38 120 38 120 36 100 36 100 34 80 34 80 32 60 32 60 30 40 30 40 28 20 28 20 0 26 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) IP3 (dBm) 140 2.7 0 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 40 Idd (mA) IP3 (dBm) +25 C +85 C - 40 C Vdd=3V 10 0.2 32 Vdd=3V HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 40 Pout Gain PAE 35 30 25 20 15 10 5 0 40 Pout Gain PAE 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -18 -16 -14 INPUT POWER (dBm) -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) Power Compression @ 500 MHz [2] Power Compression @ 500 MHz [1] 45 40 Pout (dBm), GAIN (dB), PAE (%) 45 Pout (dBm), GAIN (dB), PAE (%) Amplifiers - Low Noise - SMT 45 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 45 Pout Gain PAE 35 30 25 20 15 10 5 0 40 Pout Gain PAE 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 -18 -16 -14 INPUT POWER (dBm) 1 24 0.8 22 18 0.4 14 2.7 Noise Figure 3.1 3.5 3.9 4.3 4.7 SUPPLY VOLTAGE (V) -8 -6 -4 -2 0 5.1 0.2 0 5.5 1 GAIN P1dB 0.8 20 0.6 18 0.4 16 14 2.7 Noise Figure 3.1 3.5 3.9 4.3 4.7 5.1 0.2 NOISE FIGURE (dB) 0.6 NOISE FIGURE (dB) 20 GAIN (dB) & P1dB (dBm) GAIN P1dB 16 -10 Gain, Power & Noise Figure vs. Supply Voltage @ 500 MHz 24 22 -12 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz GAIN (dB) & P1dB (dBm) 7 Power Compression @ 400 MHz [2] Power Compression @ 400 MHz [1] 0 5.5 SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC616LP3 / 616LP3E v02.0610 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Gain Low Frequency Tune [1] Input Return Loss Low Frequency Tune [1] 0 24 RETURN LOSS (dB) -5 GAIN (dB) 22 Vdd=5V Vdd=3V 20 18 0.175 0.2 0.225 FREQUENCY (GHz) 0.15 0.25 Output Return Loss Low Frequency Tune [1] Vdd=5V Vdd=3V 0.175 0.2 0.225 FREQUENCY (GHz) 0.25 P1dB Low Frequency Tune [1] 0 22 20 -5 Vdd=5V vdd=3V P1dB (dBm) 18 -10 -15 16 14 12 Vdd=5V Vdd=3V -20 10 -25 0.15 8 0.175 0.2 0.225 FREQUENCY (GHz) 0.25 Output IP3 Low Frequency Tune [1] 0.15 0.2 0.225 FREQUENCY (GHz) 0.25 1 0.9 Vdd=5V Vdd=3V NOISE FIGURE (dB) 36 32 28 24 20 16 0.15 0.175 Noise Figure Low Frequency Tune [1] [2] 40 IP3 (dBm) -15 -25 14 0.15 -10 -20 16 RETURN LOSS (dB) Amplifiers - Low Noise - SMT 26 Vdd=5V Vdd=3V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.175 0.2 FREQUENCY (GHz) 0.225 0.25 0.15 0.175 0.2 0.225 FREQUENCY (GHz) 0.25 [1] Rbias = 2kΩ, L1 = 82 nH, L2 = 82 nH [2] Measurement reference plane shown on evaluation PCB drawing. 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 24 1 38 23 0.9 22 0.8 21 0.7 20 0.6 19 0.5 GAIN (dB) 34 32 30 28 Vdd= 3V Vdd= 5V 24 22 500 0.4 18 26 Vdd=5V Vdd=3V 17 0.3 0.2 16 1000 10000 500 NOISE FIGURE (dB) 40 36 IP3 (dBm) 7 Gain, Noise Figure & Rbias @ 400 MHz 1000 Rbias (Ohms) 10000 Rbias(Ohms) Output IP3 vs. Rbias @ 500 MHz Gain, Noise Figure & Rbias @ 500 MHz 40 21 0.7 20 0.6 19 0.5 18 0.4 38 36 GAIN (dB) IP3 (dBm) 32 30 28 26 22 500 Vdd=5V Vdd=3V 17 Vdd= 3V Vdd= 5V 24 0.2 16 1000 10000 Rbias (Ohms) 500 0.3 NOISE FIGURE (dB) 34 Amplifiers - Low Noise - SMT Output IP3 vs. Rbias @ 400 MHz 1000 10000 Rbias(Ohms) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC616LP3 / 616LP3E v02.0610 Amplifiers - Low Noise - SMT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd (V) 3V 5V Rbias (Ω) Min Max 1k [1] Open Circuit 0 Open Circuit Idd (mA) Recommended 2.7k 27 3.92k 31 4.7k 33 10k 39 820 73 2k 84 3.92k 91 10k 95 [1] With Vdd = 3V, Rbias < 1k Ohm is not recommended and may result in the LNA becoming conditionally stable. Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 8.93 mW/°C above 85 °C) 0.58 W Thermal Resistance (channel to ground paddle) 112 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 3.92kΩ) Vdd (V) Idd (mA) 2.7 20 3.0 30 3.3 40 4.5 80 5.0 90 5.5 100 Note: Amplifier will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Amplifiers - Low Noise - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC616LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC616LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 616 XXXX 616 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8 HMC616LP3 / 616LP3E v02.0610 Amplifiers - Low Noise - SMT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Pin Descriptions Function Description 1, 3 - 5, 7, 9, 10, 12 - 14, 16 Pin Number N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2 RFIN This pin is DC coupled. DC blocking capacitor required. See application circuit. 6 GND This pin and ground paddle must be connected to RF/DC ground. 11 RFOUT This pin is matched to 50 Ohms. 8 RES This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 15 Vdd Power Supply Voltage. Choke inductor and bypass capacitors are required. See application circuit. Interface Schematic Application Circuit Components for Selected Frequencies 7-9 Tuned Frequency 175 - 230 MHz 230 - 660 MHz Rbias 2.0k Ohms 3.92k Ohms L1 82 nH 47 nH L2 82 nH 51 nH For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 120728 Item J1, J2 Description PCB Mount SMA RF Connector J3, J4 DC Pin C1 10nF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0603 Pkg. C3 0.47 µF Capacitor, 0603 Pkg. C4 100 pF Capacitor, 0402 Pkg. L1 47 nH Inductor, 0603 Pkg. L2 51 nH Inductor, 0402 Pkg. R1 (Rbias) 3.92 kΩ Resistor, 0402 Pkg. U1 HMC616LP3(E) Amplifier PCB [2] 120616 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 10