HMC818LP4E v01.0809 LOW NOISE AMPLIFIERS - SMT 8 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure High OIP3: +35 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radios 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16mm2 Functional Diagram General Description The HMC818LP4E is a GaAs PHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.85 dB noise figure, 20.5 dB gain and +35 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC818LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for a specific application. Electrical Specifi cations, TA = +25° C, Rbias = 10K, Vdd= Vdd1, 2, 3, 4, Idd = Idd1 + Idd2, Idd3 + Idd4 Vdd = 3V Vdd = 5V Parameter Units Min. Frequency Range Gain Typ. Max. Min. 1700 - 2000 15 0.010 Noise Figure 0.95 Max. Min. 2000 - 2200 18 Gain Variation Over Temperature Typ. 14 0.95 Max. Min. 1700 - 2000 16.5 17 0.008 1.2 Typ. 0.85 15.5 1.1 MHz 17.5 dB 0.012 dB/°C 0.85 1.1 dB Input Return Loss 18 17 21 18 dB Output Return Loss 16 15 15 13 dB Output Power for 1 dB Compression (P1dB) 14 15 19 21 dBm Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 30 15 16 20 21.5 dBm 24.5 25 33 35 dBm 42 55 30 42 55 78 112 146 78 112 * Rbias resistor sets current, see application circuit herein 8 - 404 Max. 2000 - 2200 20.5 0.015 1.2 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 146 mA HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss [1] [2] 8 Gain vs. Temperature [1] S21 24 22 Vdd=5V Vdd=3V 5 -5 GAIN (dB) RESPONSE (dB) 15 S22 20 18 -15 16 -25 +25C +85C - 40C 14 S11 -35 0.8 12 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 Gain vs. Temperature [2] 0 24 -5 RETURN LOSS (dB) 26 20 18 16 +25C +85C - 40C 14 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 2.2 2.3 +25 C +85 C - 40 C -10 -15 -20 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Reverse Isolation vs. Temperature [1] 0 0 -5 -5 +25 C +85 C - 40 C -10 RETURN LOSS (dB) RETURN LOSS (dB) 1.9 2 2.1 FREQUENCY (GHz) -35 1.7 Output Return Loss vs. Temperature [1] -15 -20 -25 -30 -10 +25 C +85 C - 40 C -15 -20 -25 -30 -35 -40 -35 1.6 1.8 -30 12 1.6 1.7 Input Return Loss vs. Temperature [1] 22 GAIN (dB) 1.6 3 LOW NOISE AMPLIFIERS - SMT 26 25 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 10K 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [2] Vdd = 3V, Rbias = 10K For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 405 HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 8 Noise Figure vs Temperature [1] Output P1dB vs. Temperature 24 1.4 22 Vdd=5V 1.2 20 P1dB (dBm) NOISE FIGURE (dB) +85C 1 0.8 +25 C 0.6 -40C 0.4 Vdd=5V Vdd=3V 16 Vdd=3V +25 C +85 C - 40 C 12 0 1.6 18 14 0.2 10 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.6 Psat vs. Temperature 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Output IP3 vs. Temperature 24 38 36 22 Vdd=5V 34 20 32 IP3 (dBm) Psat (dBm) LOW NOISE AMPLIFIERS - SMT 1.6 18 Vdd=3V 16 +25 C +85 C - 40 C Vdd=5V 30 28 Vdd=3V 26 14 +25 C +85 C - 40 C 12 24 22 20 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.6 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.3 38 240 34 180 36 210 32 150 34 180 150 120 32 30 30 120 28 90 28 90 26 60 26 60 24 30 24 30 22 0 22 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) IP3 (dBm) 210 2.7 0 3.1 3.5 3.9 4.3 4.7 VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.1 5.5 Idd (mA) 36 2.7 8 - 406 2.2 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz Idd (mA) IP3 (dBm) Output IP3 and Idd vs. Supply Voltage @ 1700 MHz 1.7 HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Power Compression @ 1700 MHz [1] 20 10 Pout Gain PAE 0 -10 20 10 Pout Gain PAE 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -16 -14 -12 INPUT POWER (dBm) -10 -8 -6 -4 -2 INPUT POWER (dBm) Power Compression @ 2100 MHz [1] Power Compression @ 2100 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 30 Pout (dBm), GAIN (dB), PAE (%) LOW NOISE AMPLIFIERS - SMT 30 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 30 20 10 0 Pout Gain PAE -10 20 10 Pout Gain PAE 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 -16 -14 -12 -10 INPUT POWER (dBm) 1.6 26 1.4 24 20 1 18 0.8 16 0.6 0.4 14 10 2.7 GAIN P1dB 3.1 3.5 3.9 4.3 4.7 SUPPLY VOLTAGE (V) [1] Vdd = 5V -4 -2 0 2 5.1 0.2 0 5.5 1.6 1.4 Noise Figure 22 1.2 20 1 18 0.8 16 0.6 0.4 14 GAIN P1dB 12 10 2.7 3.1 3.5 3.9 4.3 4.7 5.1 NOISE FIGURE (dB) 1.2 NOISE FIGURE (dB) 22 GAIN (dB) & P1dB (dBm) Noise Figure 12 -6 Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz 26 24 -8 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz GAIN (dB) & P1dB (dBm) 8 Power Compression @ 1700 MHz [2] 0.2 0 5.5 SUPPLY VOLTAGE (V) [2] Vdd = 3V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 407 HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Gain, Noise Figure & Rbias @ 1700 MHz [1] Output IP3 vs. Rbias @ 1700 MHz [1] 36 24 2 34 23 1.8 22 1.6 21 1.4 20 1.2 19 1 18 0.8 17 0.6 GAIN (dB) IP3 (dBm) 32 30 28 26 24 22 0.4 16 100 1000 10000 100 1000 Rbias (Ohms) 140 36 120 34 100 32 80 1.4 21 20 1.2 30 60 28 26 24 GAIN (dB) 19 1 17 16 40 15 20 14 0.8 0.6 13 0 10000 1000 18 100 1000 Rbias (Ohms) Rbias(Ohms) Cross Channel Isolation [1] Magnitude Balance [1] 1 AMPLITUDE BALANCE (dB) 0 RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 -10 ISOLATION (dB) 10000 -20 -30 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 2.3 0.5 0 -0.5 -1 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) [1] Vdd = 5V 8 - 408 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2.2 2.3 NOISE FIGURE (dB) IP3 (dBm) Gain, Noise Figure & Rbias @ 2100 MHz [1] 38 -40 1.6 10000 Rbias(Ohms) Output IP3 vs. Rbias @ 2100 MHz [1] 100 NOISE FIGURE (dB) LOW NOISE AMPLIFIERS - SMT 8 HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 8 Phase Balance [1] LOW NOISE AMPLIFIERS - SMT PHASE BALANCE (degrees) 2 1 0 -1 -2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Rbias Vdd (V) Idd (mA) Min (Ohms) Max (Ohms) R1 (Ohms) 3V 10K [2] Open Circuit 10K 120 64 5V 0 Open Circuit 470 82 10K 112 42 [2] With Vdd= 3V and Rbias < 10K Ohm may result in the part becoming conditionally unstable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) 6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 19.35 mW/°C above 85 °C) 1.26 W Thermal Resistance (channel to ground paddle) 51.67 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 10K) Vdd (V) Idd (mA) 2.7 31 3.0 42 3.3 52 4.5 95 5.0 112 5.5 129 Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS [1] Vdd = 5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 409 HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Outline Drawing LOW NOISE AMPLIFIERS - SMT 8 Part Number Package Body Material Lead Finish HMC818LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] 818 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 235 °C 8 - 410 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Pin Number Function Description 1, 6 RFIN1, 2 This pin is DC coupled an off chip DC blocking capacitor is required. 2, 5, 7, 12, 14, 17, 19, 24 GND Package bottom must be connected to RF/DC ground. 3, 4, 9, 10, 21, 22 N/C No connection required. These pins may be connected to RF/ DC ground without affecting performance. 23, 20, 8, 11 Vdd1, 2, 3, 4 Power supply voltage for each amplifier. Choke inductor and bypass capacitors are required. See application circuit. 18, 13 RFOUT1, 2 This pin is matched to 50 Ohms. 16, 15 RES1, 2 These pins are used to set the DC current Idd2 and Idd4 in each amplifier via an external biasing resistor. See application circuit. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LOW NOISE AMPLIFIERS - SMT 8 Pin Descriptions 8 - 411 HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Application Circuit LOW NOISE AMPLIFIERS - SMT 8 8 - 412 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC818LP4E v01.0809 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 8 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Material for Evaluation PCB 122727 [1] Item Description J1 - J4 PCB Mount SMA RF Connector J5, J6 2mm Vertical Molex 8pos Connector C1, C2 220 pF Capacitor, 0402 Pkg.. C3, C5, C7, C9 1000 pF Capacitor, 0603 Pkg. C4, C6, C8, C10 0.47 μF Capacitor, 0603 Pkg. C11, C12 10 kpF Capacitor, 0402 Pkg. C13, C14 0 Ohm Resistor, 0402 Pkg. L5, L7 15 nH Inductor, 0603 Pkg. L6, L8 6.8 nH Inductor, 0603 Pkg. R1, R2 (Rbias 1, 2) 10k Ohm Resistor, 0402 Pkg. U1 HMC818LP4(E) Amplifier PCB [2] 122725 Evaluation PCB The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 413