HMC863 v00.1109 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Typical Applications Features The HMC863 is ideal for: Saturated Output Power: +28 dBm @ 18% PAE • Point-to-Point Radios High Output IP3: +39 dBm • Point-to-Multi-Point Radios High Gain: 27 dB • VSAT DC Supply: +6V @ 375mA • Military & Space 50 Ohm Matched Input/Output Die Size: 2.41 x 0.95 x 0.1 mm Functional Diagram General Description The HMC863 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 24 and 29.5 GHz. The HMC863 provides 27 dB of gain, and +27 dBm of saturated output power at 18% PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd = +6V, Idd = 375mA[1] Parameter Min. Frequency Range Max. Min. 24 - 27 Gain 24 Gain Variation Over Temperature Input Return Loss Output Return Loss 27 Saturated Output Power (Psat) (IP3)[2] Total Supply Current (Idd) 24 Typ. Max. 27 - 29.5 22 GHz dB 0.0375 0.05 dB/ °C 17 11 dB 11 dB 26 dBm 27 dBm 37 38 dBm 375 375 mA 27 28 23 [1] Adjust Vgg between -2 to 0V to achieve Idd= 375mA typical. [2] Measurement taken at +6V @ 375mA, Pout / Tone = +16 dBm 3 - 142 Units 25 15 Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 30 34 32 30 0 -10 3 28 26 24 22 -20 +25C +85C -55C 20 -30 18 21 22 23 24 25 26 27 28 29 30 24 25 FREQUENCY (GHz) 28 29 30 Output Return Loss vs. Temperature 0 0 +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 27 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -20 -25 -10 -15 -20 +25C +85C -55C -25 -30 -30 24 25 26 27 28 29 30 24 25 FREQUENCY (GHz) 27 28 29 30 29 30 P1dB vs. Supply Voltage 31 29 29 P1dB (dBm) 31 27 25 +25C +85C -55C 23 26 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 26 27 25 6.0V 5.5V 5.0V 23 21 LINEAR & POWER AMPLIFIERS - CHIP S21 S11 S22 10 GAIN (dB) RESPONSE (dB) 20 21 24 25 26 27 28 FREQUENCY (GHz) 29 30 24 25 26 27 28 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 143 HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Psat vs. Supply Voltage 31 29 29 Psat (dBm) 31 27 25 +25C +85C -55C 23 25 6.0V 5.5V 5.0V 21 24 25 26 27 28 29 30 24 25 FREQUENCY (GHz) 31 29 29 Psat (dBm) P1dB (dBm) 27 28 29 30 29 30 Psat vs. Supply Current (Idd) 31 27 25 350mA 375mA 400mA 23 26 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 27 25 350mA 375mA 400mA 23 21 21 24 25 26 27 28 29 30 24 25 FREQUENCY (GHz) 26 27 28 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +16 dBm Output IP3 vs. Supply Current, Pout/Tone = +16 dBm 46 42 42 IP3 (dBm) 46 38 +25C +85C -55C 34 38 350mA 375mA 400mA 34 30 30 24 25 26 27 28 FREQUENCY (GHz) 3 - 144 27 23 21 IP3 (dBm) LINEAR & POWER AMPLIFIERS - CHIP 3 Psat (dBm) Psat vs. Temperature 29 30 24 25 26 27 28 29 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 30 HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +16 dBm Output IM3 @ Vdd = +5V 46 60 50 42 IM3 (dBc) IP3 (dBm) 38 24 GHz 26 GHz 28 GHz 29 GHz 20 6.0V 5.5V 5.0V 34 30 10 30 0 23 24 25 26 27 28 29 9 30 11 13 15 60 50 50 40 40 24 GHz 26 GHz 28 GHz 29 GHz 20 30 21 23 19 21 23 24 GHz 26 GHz 28 GHz 29 GHz 20 10 10 0 0 9 11 13 15 17 19 21 23 9 11 13 15 Pout/TONE (dBm) 17 Pout/TONE (dBm) Reverse Isolation vs. Temperature Output Power, Gain & PAE @ 27 GHz 35 0 30 REVERSE ISOLATION (dB) Pout (dBm), GAIN (dB), PAE (%) 19 Output IM3 @ Vdd = +6V 60 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +5.5V 30 17 Pout/TONE (dBm) FREQUENCY (GHz) 25 20 15 10 Pout Gain PAE 5 0 LINEAR & POWER AMPLIFIERS - CHIP 3 40 -10 +25C +85C -55C -20 -30 -40 -50 -60 -16 -12 -8 -4 INPUT POWER (dBm) 0 4 24 25 26 27 28 29 30 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 145 HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Gain & Power vs. Supply Current @ 27 GHz Gain & Power vs. Supply Voltage @ 27 GHz Gain (dB), P1dB (dBm), Psat (dBm) 30 Gain (dB) P1dB (dBm) Psat (dBm) 29 28 27 26 25 350 Gain (dB) P1dB (dBm) Psat (dBm) 29 28 27 26 25 360 370 380 390 5 400 5.2 5.4 5.6 5.8 6 Vdd (V) Idd (mA) Power Dissipation 3 POWER DISSIPATION (W) LINEAR & POWER AMPLIFIERS - CHIP 3 Gain (dB), P1dB (dBm), Psat (dBm) 30 2.5 2 24 GHz 25 GHz 26 GHz 27 GHz 28 GHz 1.5 1 -18 -15 -12 -9 -6 -3 0 3 6 INPUT POWER (dBm) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +6.5V Vdd (V) Idd (mA) RF Input Power (RFIN) +26 dBm +5.0 375 Channel Temperature 150 °C +5.5 375 +6.0 375 Continuous Pdiss (T= 85 °C) (derate 37.2 mW/°C above 85 °C) 2.42W Thermal Resistance (channel to die bottom) 26.9 °C/W Storage Temperature -65 to 150 °C Operating Temperature -55 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 375mA at +5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3 - 146 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 Vgg Gate control for PA. Adjust Vgg to achieve recommended bias current. External bypass caps 100pF, 0.1 μF and 4.7 μF are required. 3 Vdd Drain bias for amplifier. External bypass caps 100pF, 0.1 μF and 4.7uF are required 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 147 HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Assembly Diagram LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 148 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 3 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 149