HMC1024 v00.0312 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Typical Applications Features The HMC1024 is ideal for: Saturated Output Power: +31 dBm @ 29% PAE • Point-to-Point Radios High Output IP3: +40 dBm • Point-to-Multi-Point Radios High Gain: 24 dB • VSAT & SATCOM DC Supply: +5V @ 600 mA • Military & Space No External Matching Required Die Size: 2.79 x 1.3 x 0.1 mm Functional Diagram General Description The HMC1024 is a four stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 27.5 and 33.5 GHz. The HMC1024 provides 24 dB of gain, +31 dBm of saturated output power, and 29% PAE from a +5 V power supply. The HMC1024 exhibits excellent linearity and is optimized for high capacity point to point and point to multi-point radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Electrical Specifications, TA = +25° C, Vdd1, Vdd2, = +5V, Idd = 600 mA [1] Parameter Min. Frequency Range Gain Typ. Max. Units 27.5 - 30 20.5 Gain Variation Over Temperature 23.5 30 - 33.5 21.5 0.025 GHz 24.5 dB 0.025 dB/ °C Input Return Loss 12 17 dB Output Return Loss 12 18 dB Output Power for 1 dB Compression (P1dB) 28.5 dBm Saturated Output Power (Psat) 27 29 31 27 30.5 dBm Output Third Order Intercept (IP3)[2] 40 40 dBm Total Supply Current (Idd) 600 600 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 600 mA typical. [2] Measurement taken at +5 V @ 600mA, Pout / Tone = +20 dBm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz 30 20 28 26 S21 S11 S22 10 0 -10 24 22 +25 C +85 C -55 C 20 -20 18 -30 16 25 27 29 31 33 35 27 28 29 FREQUENCY (GHz) Input Return Loss vs. Temperature 32 33 34 0 +25 C +85 C -55 C -10 RETURN LOSS (dB) RETURN LOSS (dB) 31 Output Return Loss vs. Temperature 0 -20 -30 -40 +25 C +85 C -55 C -10 -20 -30 -40 27 28 29 30 31 32 33 34 27 28 29 FREQUENCY (GHz) 30 31 32 33 34 33 34 FREQUENCY (GHz) P1dB vs. Temperature P1dB vs. Supply Voltage 34 34 +25C +85C -55C 5V 5.5V 6V 32 P1dB (dBm) 32 P1dB (dBm) 30 FREQUENCY (GHz) Amplifiers - Linear & Power - Chip Gain vs. Temperature 30 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss vs. Frequency 30 28 26 30 28 26 24 24 27 28 29 30 31 FREQUENCY (GHz) 32 33 34 27 28 29 30 31 32 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz 34 32 32 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 34 30 28 +25 C +85 C -55 C 26 28 5V 5.5V 6V 24 27 28 29 30 31 32 33 34 27 28 29 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 31 32 33 34 Psat vs. Supply Current (Idd) 34 34 500 mA 600 mA 700 mA 32 Psat (dBm) 32 30 28 26 30 28 500 mA 600 mA 700 mA 26 24 24 27 28 29 30 31 32 33 34 28 29 30 FREQUENCY (GHz) 32 33 34 Output IP3 vs. Supply Current, Pout/Tone = +20 dBm 45 45 40 40 35 +25 C +85 C -55 C 30 31 FREQUENCY (GHz) IP3 (dBm) IP3 (dBm) 30 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +20 dBm 35 500 mA 600 mA 700 mA 30 25 25 27 28 29 30 31 FREQUENCY (GHz) 3 30 26 24 P1dB (dBm) Amplifiers - Linear & Power - Chip Psat vs. Temperature 32 33 34 27 28 29 30 31 32 33 34 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +20 dBm Output IM3 @ Vdd = +5V 45 60 50 IM3 (dBc) IP3 (dBm) 40 5V 5.5V 6V 35 40 30 27 GHz 29 GHz 30 GHz 31 GHz 33 GHz 20 30 10 25 0 27 28 29 30 31 32 33 34 10 12 14 FREQUENCY (GHz) 70 60 60 50 50 40 27 GHz 29 GHz 30 GHz 31 GHz 33 GHz 20 20 22 24 20 22 24 40 30 27 GHz 29 GHz 30 GHz 31 GHz 33 GHz 20 10 10 0 0 10 12 14 16 18 20 22 10 24 12 14 16 18 Pout/TONE (dBm) Pout/TONE (dBm) Gain & Power vs. Supply Current @ 30 GHz Power Compression @ 30 GHz 40 35 Gain (dB), P1dB (dBm), Psat (dBm) 40 Pout (dBm), GAIN (dB), PAE (%) 18 Output IM3 @ Vdd = +6V 70 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +5.5V 30 16 Pout/TONE (dBm) Amplifiers - Linear & Power - Chip 70 Pout Gain PAE 30 25 20 15 10 5 GAIN (dB) P1dB (dBm) Psat (dBm) 35 30 25 20 15 0 -9 -6 -3 0 3 INPUT POWER (dBm) 6 9 12 500 550 600 650 700 Idd (mA) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Gain & Power vs. Supply Voltage @ 30 GHz Reverse Isolation vs. Temperature 0 -10 GAIN (dB) P1dB (dBm) Psat (dBm) 35 +25C +85C -55C -20 ISOLATION (dB) Gain (dB), P1dB (dBm), Psat (dBm) 30 25 -30 -40 -50 -60 20 -70 15 -80 5 5.2 5.5 5.7 6 27 28 Vdd (V) 29 30 31 32 33 34 FREQUENCY (GHz) Power Dissipation 5 POWER DISSIPATION (W) Amplifiers - Linear & Power - Chip 40 4 3 2 27 GHz 29 GHz 30 GHz 31 GHz 33 GHz 1 0 -9 -5 -1 3 7 11 INPUT POWER (dBm) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +7V Vdd (V) Idd (mA) RF Input Power (RFIN) +18 dBm +5.0 600 Channel Temperature 150 °C +5.5 600 +6.0 600 Continuous Pdiss (T= 85 °C) (derate 66.6 mW/°C above 85 °C) 4.34 W Thermal Resistance (channel to die bottom) 15.0 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above, Vgg adjusted to achieve Idd = 600 mA at +5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± .002 Die Packaging Information Amplifiers - Linear & Power - Chip Outline Drawing [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Amplifiers - Linear & Power - Chip Pad Descriptions 7 Pad Number Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. 2, Vgg Gate control for amplifier. Adjust Vgg to achieve recommended bias current. External bypass capacitors 100 pF, 10 nF, and 4.7 uF are required. 3 RFOUT This pad is AC coupled and matched to 50 Ohms. 4, 5 Vdd2, Vdd1 Drain bias voltage. External bypass capacitors of 100 pF are required for each pad., followed by common 10 nF and 4.7 uF capacitors. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Amplifiers - Linear & Power - Chip Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Amplifiers - Linear & Power - Chip Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1024 v00.0312 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 27.5 - 33.5 GHz Amplifiers - Linear & Power - Chip Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10