B0520WS/B0530WS/B0540WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES z z z z Low Forward Voltage Drop Guard Ring Construction for Transi ent Protection High Conductance Also Available in Lead Free Version - MARKING: B0520WS: SD B0530WS: SE B0540WS: SF Maximum Ratings @TA=25℃ Parameter Symbol Peak Repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking B0520WS B0530WS B0540WS Unit 20 30 40 V 14 21 28 V VR Voltage RMS Reverse Voltage Reverse voltage (DC) VR(RMS) Io 0.5 A Forward current surge peak IFSM 5.5 A Power dissipation PD 200 mW RθJA 625 ℃/W ℃ Average rectified output Current Thermal Resistance Junction to Ambient Junction temperature Tj 150 Storage temperature TSTG -65~+150 ℃ Voltage Rate of Change dv/dt 1000 V/μS Electrical Characteristics @TA=25℃ Parameter Minimum Reverse Breakdown Voltage Forward voltage Reverse current Reverse current Capacitance between terminals Symbol B0520WS B0530WS B0540WS 20 -- -- -- 30 -- -- -- 40 IR=20μA VF1 0.3 0.36 -- IF=0.1A VF2 0.385 0.45 0.510 VF3 -- -- 0.62 IR1 75 -- -- IR2 -- 80 -- IR3 250 100 10 IR4 -- 500 -- IR5 -- -- 20 CT 170 170 170 V(BR)R Unit Conditions IR=250μA V V IR=500μA IF=0.5A IF=1A μA VR=10V VR=15V VR=20V μA VR=30V VR=40V pF VR=0,f=1MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ B0520WS/B0530WS/B0540WS Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５