HTSEMI B0530WS

B0520WS/B0530WS/B0540WS
SOD-323
SCHOTTKY BARRIER DIODE
+
FEATURES
z
z
z
z
Low Forward Voltage Drop
Guard Ring Construction for Transi ent Protection
High Conductance
Also Available in Lead Free Version
-
MARKING: B0520WS: SD
B0530WS: SE
B0540WS: SF
Maximum Ratings @TA=25℃
Parameter
Symbol
Peak Repetitive Peak reverse voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking
B0520WS
B0530WS
B0540WS
Unit
20
30
40
V
14
21
28
V
VR
Voltage
RMS Reverse Voltage Reverse voltage (DC)
VR(RMS)
Io
0.5
A
Forward current surge peak
IFSM
5.5
A
Power dissipation
PD
200
mW
RθJA
625
℃/W
℃
Average rectified output Current
Thermal Resistance Junction to Ambient
Junction temperature
Tj
150
Storage temperature
TSTG
-65~+150
℃
Voltage Rate of Change
dv/dt
1000
V/μS
Electrical Characteristics @TA=25℃
Parameter
Minimum Reverse
Breakdown Voltage
Forward voltage
Reverse current
Reverse current
Capacitance between terminals
Symbol
B0520WS
B0530WS
B0540WS
20
--
--
--
30
--
--
--
40
IR=20μA
VF1
0.3
0.36
--
IF=0.1A
VF2
0.385
0.45
0.510
VF3
--
--
0.62
IR1
75
--
--
IR2
--
80
--
IR3
250
100
10
IR4
--
500
--
IR5
--
--
20
CT
170
170
170
V(BR)R
Unit
Conditions
IR=250μA
V
V
IR=500μA
IF=0.5A
IF=1A
μA
VR=10V
VR=15V
VR=20V
μA
VR=30V
VR=40V
pF
VR=0,f=1MHz
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
B0520WS/B0530WS/B0540WS
Typical Characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05