HTSEMI SD103CW

SD103AW-SD103CW
SCHOTTKY DIODES
SOD-123
SOD-123
FEATURES
z Low forward voltage drop
z Guard ring construction for transient protection
z Negligible reverse recovery time
z Low reverse capacitance
+
MARKING:
SD103AW: S4
SD103BW: S5
SD103CW: S6
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Symbol
Peak Repetitive Peak reverse voltage
VRRM
Working Peak
VRWM
DC Blocking
SD103AW
SD103BW
SD103CW
Unit
40
30
20
V
28
21
14
V
VR
Voltage
RMS Reverse Voltage
VR(RMS)
Forward Continuous Current
IFM
350
mA
Repetitive Peak Forward Current @t≤1.0s
IFRM
1.5
A
Pd
500
mW
Thermal Resistance Junction to Ambient
RθJA
250
℃/W
Storage temperature
TSTG
-65~+150
Power Dissipation
℃
Electrical Ratings @TA=25℃
Parameter
Reverse Breakdown Voltage
Symbol
SD103AW
SD103BW
SD103CW
Forward voltage
Reverse current
Min.
Typ.
Unit
40
V (BR)R
Conditions
IR=100μA
30
V
IR=100μA
IR=100μA
20
0.37
VF
SD103AW
SD103BW
SD103CW
Max.
0.60
V
IF=20mA
IF=200mA
VR=30V
IRM
5.0
μA
VR=20V
VR=10V
Capacitance between terminals
CT
50
pF
Reverse Recovery Time
trr
10
ns
VR=0V,f=1.0MHz
IF=IR=200mA
Irr=0.1XIR,RL=100Ω
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
SD103AW-SD103CW
Typical Characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05