B5817W-5819W SCHOTTKY BARRIER DIODE SOD-123 FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. + MARKING: B5817W: SJ B5818W:SK B5819W: SL - Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V Parameter RMS Reverse Voltage Average Rectified Output Current IO 1 A Peak forward surge current @=8.3ms IFSM 9 A Repetitive Peak Forward Current IFRM 1.5 A Pd 500 mW RθJA 250 ℃/W TSTG -65~+150 ℃ Power Dissipation Thermal Ambient Resistance Junction Storage temperature to ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions IR= 1mA Reverse breakdown voltage Reverse voltage leakage current IR VR=20V VR=30V VR=40V B5817W Forward voltage VF B5818W B5819W Diode capacitance B5817W B5818W B5819W B5817W B5818W B5819W V(BR) CD specified) MIN MAX 20 30 40 V 1 IF=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 IF=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz UNIT 120 mA V V V pF １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ B5817W-5819W Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５