HTSEMI BZX84C6V2CCW

BZX84C…CCW Series
SILICON PLANAR ZENER DIODES
3
1
2
1. Anode 2. Anode 3. Cathode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
PD
200
mW
Tj ,TS
- 55 to + 150
Power Dissipation
Operating Junction and Storage Temperature Range
C
O
Electrical Characteristics at Ta = 25 OC (VF = 0.9 V Max. at IF = 10 mA)
Zener Voltage Range 1)
Type
Marking
Code
Min.(V)
BZX84C2V4CCW
NA
2.2
BZX84C2V7CCW
NB
2.5
BZX84C3V0CCW
NC
2.8
BZX84C3V3CCW
ND
BZX84C3V6CCW
NE
BZX84C3V9CCW
NF
BZX84C4V3CCW
BZX84C4V7CCW
VZ
Dynamic Resistance
Reverse Current
at lZT
ZZT
at lZT
ZZK
at IZK
IR
at VR
Max.(V)
mA
Max.(Ω)
mA
Max.(Ω)
mA
Max.(µA)
V
2.6
5
100
5
600
1
50
1
2.9
5
100
5
600
1
20
1
3.2
5
95
5
600
1
20
1
3.1
3.5
5
95
5
600
1
5
1
3.4
3.8
5
90
5
600
1
5
1
3.7
4.1
5
90
5
600
1
3
1
NH
4
4.6
5
90
5
600
1
3
1
NJ
4.4
5
5
80
5
600
1
3
2
BZX84C5V1CCW
NK
4.8
5.4
5
60
5
500
1
2
2
BZX84C5V6CCW
NM
5.2
6
5
40
5
480
1
1
2
BZX84C6V2CCW
NN
5.8
6.6
5
10
5
400
1
3
4
BZX84C6V8CCW
NP
6.4
7.2
5
15
5
150
1
2
4
BZX84C7V5CCW
NR
7
7.9
5
15
5
80
1
1
5
BZX84C8V2CCW
NX
7.7
8.7
5
15
5
80
1
0.7
5
BZX84C9V1CCW
NY
8.5
9.6
5
15
5
80
1
0.5
6
BZX84C10CCW
NZ
9.4
10.6
5
20
5
100
1
0.2
7
BZX84C11CCW
PA
10.4
11.6
5
20
5
150
1
0.1
8
BZX84C12CCW
PB
11.4
12.7
5
25
5
150
1
0.1
8
BZX84C13CCW
PC
12.4
14.1
5
30
5
150
1
0.1
8
BZX84C15CCW
PD
13.8
15.6
5
30
5
170
1
0.1
10.5
BZX84C16CCW
PE
15.3
17.1
5
40
5
200
1
0.1
11.2
BZX84C18CCW
PF
16.8
19.1
5
45
5
200
1
0.1
12.6
BZX84C20CCW
PH
18.8
21.2
5
55
5
225
1
0.1
14
BZX84C22CCW
PJ
20.8
23.3
5
55
5
225
1
0.1
15.4
BZX84C24CCW
PK
22.8
25.6
5
70
5
250
1
0.1
16.8
BZX84C27CCW
PM
25.1
28.9
2
80
2
250
0.5
0.1
18.9
BZX84C30CCW
PN
28
32
2
80
2
300
0.5
0.1
21
BZX84C33CCW
PP
31
35
2
80
2
300
0.5
0.1
23.1
BZX84C36CCW
PR
34
38
2
90
2
325
0.5
0.1
25.2
BZX84C39CCW
PX
37
41
2
130
2
350
0.5
0.1
27.3
1)
Tested with pulses tp = 20 ms.
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
BZX84C…CCW Series
Electrical Characteristics at Ta = 25 OC (VF = 0.9 V Max. at IF = 10 mA)
Type
Zener Voltage Range 1)
Marking
Code
VZ
Dynamic Resistance
Reverse Current
at lZT
ZZT
at lZT
ZZK
at IZK
IR
at VR
mA
Max.(Ω)
mA
Max.(µA)
V
Min.(V)
Max.(V)
mA
Max.(Ω)
BZX84C43CCW
PY
40
46
2
150
2
375
0.5
0.1
30.1
BZX84C47CCW
PZ
44
50
2
170
2
375
0.5
0.1
32.9
BZX84C51CCW
RA
48
54
2
180
2
400
0.5
0.1
35.7
BZX84C56CCW
RB
52
60
2
200
2
425
0.5
0.1
39.2
BZX84C62CCW
RC
58
66
2
215
2
450
0.5
0.1
43.4
BZX84C68CCW
RD
64
72
2
240
2
475
0.5
0.1
47.6
BZX84C75CCW
RE
70
79
2
255
2
500
0.5
0.1
52.5
1)
Tested with pulses tp = 20 ms.
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５