HTSEMI MM1Z8B2

MM1Z2B4~MM1ZB75
SILICON PLANAR ZENER DIODES
PINNING
PIN
Features
• Power Dissipation: 500 mW
• Zener Voltage Tolerance: ± 2%
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Power Dissipation
Ptot
500
mW
Junction Temperature
TJ
150
O
TStg
- 55 to + 150
O
Symbol
Max.
RthA
340
VF
0.9
Storage Temperature Range
C
C
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Unit
C/W
O
V
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM1Z2B4~MM1ZB75
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
Marking
Code
Vznom
V
MM1Z2B4
5Y1
2.4
MM1Z2B7
5Z1
2.7
MM1Z3B0
6A1
3.0
MM1Z3B3
6B1
3.3
MM1Z3B6
6C1
3.6
MM1Z3B9
6D1
3.9
MM1Z4B3
6E1
4.3
MM1Z4B7
6F1
4.7
MM1Z5B1
6G1
5.1
MM1Z5B6
6H1
5.6
MM1Z6B2
6J1
6.2
MM1Z6B8
6K1
6.8
MM1Z7B5
6L1
7.5
MM1Z8B2
6M1
8.2
MM1Z9B1
6N1
9.1
MM1ZB10
6P1
10
MM1ZB11
6Q1
11
MM1ZB12
6R1
12
MM1ZB13
6S1
13
MM1ZB15
6T1
15
MM1ZB16
6U1
16
MM1ZB18
6W1
18
MM1ZB20
6X1
20
MM1ZB22
6Y1
22
MM1ZB24
6Z1
24
MM1ZB27
7A1
27
MM1ZB30
7B1
30
MM1ZB33
7C1
33
MM1ZB36
7D1
36
MM1ZB39
7E1
39
MM1ZB43
7F1
43
MM1ZB47
7G1
47
MM1ZB51
7H1
51
MM1ZB56
7J1
56
MM1ZB62
7K1
62
MM1ZB68
7L1
68
MM1ZB75
7M1
75
1)
VZ is tested with pulses (20 ms).
lZT
Reverse Leakage Current
VZT
ZZT (Max.)
at IZ
mA
V
Ω
mA
μA
V
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.352…2.448
2.646…2.754
2.94…3.06
3.234…3.366
3.528…3.672
3.822…3.978
4.214…4.386
4.606…4.794
4.998…5.202
5.488…5.712
6.076…6.324
6.664…6.936
7.35…7.65
8.036…8.364
8.918…9.282
9.8…10.2
10.78…11.22
11.76…12.24
12.74…13.26
14.7…15.3
15.68…16.32
17.64…18.36
19.6…20.4
21.56…22.44
23.52…24.48
26.46…27.54
29.4…30.6
32.34…33.66
35.28…36.72
38.22…39.78
42.14…43.86
46.06…47.94
49.98…52.02
54.88…57.12
60.76…63.24
66.64…69.36
73.5…76.5
100
110
120
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
35
40
40
45
50
55
60
70
80
80
90
100
130
150
180
180
200
250
300
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
120
120
50
20
10
5
5
2
2
1
1
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
1
1
0.2
0.2
0.2
1
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
57
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for
Dynamic Impedance
IR (Max.)
at VR
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM1Z2B4~MM1ZB75
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
c
A
∠ ALL ROUND
HE
A
bp
E
D
UNIT
A
bp
c
D
E
HE
v
∠
mm
1.15
1.05
0.6
0.5
0.135
0.100
2.7
2.6
1.65
1.55
3.9
3.7
0.2
5
O
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５