HTSEMI MM1Z5265B

MM1Z5221B~MM1Z5267B
SILICON PLANAR ZENER DIODES
PINNING
PIN
Features
• Total power dissipation: Max. 500 mW
• Small plastic package suitable for
surface mounted design
• Tolerance approximately ± 5%
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
Ptot
500
mW
Tj
150
O
TStg
- 55 to + 150
O
Symbol
Max.
RθJA
350
VF
0.9
C
C
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Unit
C/W
O
V
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM1Z5221B~MM1Z5267B
Characteristics at Ta = 25 OC
Type
Marking
Code
Vznom
lZT
MM1Z5221B
MM1Z5223B
MM1Z5225B
MM1Z5226B
MM1Z5227B
MM1Z5228B
MM1Z5229B
MM1Z5230B
MM1Z5231B
MM1Z5232B
MM1Z5234B
MM1Z5235B
MM1Z5236B
MM1Z5237B
MM1Z5239B
MM1Z5240B
MM1Z5241B
MM1Z5242B
MM1Z5243B
MM1Z5245B
MM1Z5246B
MM1Z5248B
MM1Z5249B
MM1Z5250B
MM1Z5251B
MM1Z5252B
MM1Z5253B
MM1Z5254B
MM1Z5256B
MM1Z5257B
MM1Z5258B
MM1Z5259B
MM1Z5260B
MM1Z5261B
MM1Z5262B
MM1Z5263B
MM1Z5265B
MM1Z5266B
MM1Z5267B
A4
B4
C4
D4
E4
F4
H4
J4
K4
M4
N4
P4
R4
X4
Y4
Z4
A5
B5
C5
D5
E5
F5
K9
H5
J5
K5
M9
M5
N5
P5
R5
X5
Y5
Z5
A6
B6
C6
D6
E6
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
19
20
22
24
25
27
30
33
36
39
43
47
51
56
62
68
75
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7
6.6
6.2
5.6
5.2
5
4.6
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2
1.8
1.7
1)
2)
Dynamic Impedance 2)
Zener Voltage Range 1)
for
VZT
V
2.28…2.52
2.57…2.84
2.85…3.15
3.14…3.47
3.42…3.78
3.71…4.1
4.09…4.52
4.47…4.94
4.85…5.36
5.32…5.88
5.89…6.51
6.46…7.14
7.13…7.88
7.79…8.61
8.65…9.56
9.5…10.5
10.45…11.55
11.4…12.6
12.35…13.65
14.25…15.75
15.2…16.8
17.1…18.9
18.05…19.95
19…21
20.9…23.1
22.8…25.2
23.75…26.25
25.65…28.35
28.5…31.5
31.35…34.65
34.2…37.8
37.05…40.95
40.85…45.15
44.65…49.35
48.45…53.55
53.2…58.8
58.9…65.1
64.6…71.4
71.25…78.75
ZZT
Ω (Max.)
30
30
29
28
24
23
22
19
17
11
7
5
6
8
10
17
22
30
13
16
17
21
23
25
29
33
35
41
49
58
70
80
93
105
125
150
185
230
270
Reverse Current
ZZK
at IZK
IR
at VR
Ω (Max.)
1200
1300
1600
1600
1700
1900
2000
1900
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1600
1700
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
µA (Max.)
100
75
50
25
15
10
5
5
5
5
5
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
1
1
1
1
1
1
1
2
2
3
4
5
6
6.5
7
8
8.4
9.1
9.9
11
12
14
14
15
17
18
19
21
23
25
27
30
33
36
39
43
47
52
56
VZ is tested with pulses (20 ms)
ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified
limits are for IZ(AC) = 0.1 IZ(DC) with the AC frequency = 1 KHz.
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM1Z5221B~MM1Z5267B
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM1Z5221B~MM1Z5267B
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
c
A
∠ ALL ROUND
HE
A
bp
E
D
UNIT
A
bp
c
D
E
HE
v
∠
mm
1.15
1.05
0.6
0.5
0.135
0.100
2.7
2.6
1.65
1.55
3.9
3.7
0.2
5
O
４
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５