MM1Z4689~MM1Z4717 SILICON PLANAR ZENER DIODES PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Total Device Dissipaton Ptot 500 mW Junction Temperature TJ 150 O TStg - 55 to + 150 O Symbol Max. Unit VF 0.9 V Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z4689~MM1Z4717 Zener Voltage 1) Type Marking Code VZT (V) Reverse Leakage Current at lZT IR at VR Nom. Min. Max. µA Max. (µA) V MM1Z4689 MM1Z4690 MM1Z4691 MM1Z4692 MM1Z4693 BX BY BZ CA CB 5.1 5.6 6.2 6.8 7.5 4.85 5.32 5.89 6.46 7.13 5.36 5.88 6.51 7.14 7.88 50 50 50 50 50 10 10 10 10 10 3 4 5 5.1 5.7 MM1Z4694 MM1Z4696 MM1Z4697 MM1Z4698 CC CE CF CH 8.2 9.1 10 11 7.79 8.65 9.5 10.45 8.61 9.56 10.5 11.55 50 50 50 50 1 1 1 0.05 6.2 6.9 7.6 8.4 MM1Z4699 MM1Z4700 MM1Z4702 MM1Z4703 CJ CK CN CP 12 13 15 16 11.4 12.35 14.25 15.2 12.6 13.65 15.75 16.8 50 50 50 50 0.05 0.05 0.05 0.05 9.1 9.8 11.4 12.1 MM1Z4705 MM1Z4707 MM1Z4708 CX CZ DA 18 20 22 17.1 19 20.9 18.9 21 23.1 50 50 50 0.05 0.01 0.01 13.6 15.2 16.7 MM1Z4709 MM1Z4711 MM1Z4713 DB DD DF 24 27 30 22.8 25.65 28.5 25.2 28.35 31.5 50 50 50 0.01 0.01 0.01 18.2 20.4 22.8 MM1Z4714 MM1Z4715 MM1Z4716 MM1Z4717 DH DJ DK DM 33 36 39 43 31.35 34.2 37.05 40.85 34.65 37.8 40.95 45.15 50 50 50 50 0.01 0.01 0.01 0.01 25 27.3 29.6 32.6 1) Tested with pulses tp = 20 ms. ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z4689~MM1Z4717 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z4689~MM1Z4717 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 c A ALL ROUND HE A bp E D UNIT A bp c D E HE v mm 1.15 1.05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.9 3.7 0.2 5 O ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５