HTSEMI MM3Z5252B

MM3Z5221B~MM3Z5267B
Silicon Planar Zener Diodes
PINNING
PIN
Features
• Total power dissipation: Max. 300 mW
• Small plastic package suitable for
surface mounted design
• Tolerance approximately ± 5%
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Symbol
Value
Unit
Ptot
300
mW
Tj
150
O
Tstg
- 55 to + 150
O
Symbol
Max.
RθJA
417
VF
0.9
C
C
Unit
C/W
O
V
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z5221B~MM3Z5267B
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Marking
Code
Vznom
lZT
V
MM3Z5221B
A1
MM3Z5223B
B1
MM3Z5225B
MM3Z5226B
MM3Z5227B
E1
MM3Z5228B
F1
MM3Z5229B
H1
4.3
MM3Z5230B
J1
4.7
Type
for
Dynamic Impedance
ZZK
Reverse Current
VZT
ZZT
at IZK
IR
at VR
mA
V
Ω (Max.)
Ω (Max.)
mA
µA (Max.)
2.4
20
2.28…2.52
2.7
20
2.57…2.84
30
1200
0.25
100
1
30
1300
0.25
75
1
C1
3.0
20
D1
3.3
20
2.85…3.15
29
1600
0.25
50
1
3.14…3.47
28
1600
0.25
25
1
3.6
20
3.42…3.78
24
1700
0.25
15
1
3.9
20
3.71…4.1
23
1900
0.25
10
1
20
4.09…4.52
22
2000
0.25
5
1
20
4.47…4.94
19
1900
0.25
5
2
2
V
MM3Z5231B
K1
5.1
20
4.85…5.36
17
1600
0.25
5
MM3Z5232B
M1
5.6
20
5.32…5.88
11
1600
0.25
5
3
MM3Z5234B
N1
6.2
20
5.89…6.51
7
1000
0.25
5
4
MM3Z5235B
P1
6.8
20
6.46…7.14
5
750
0.25
3
5
MM3Z5236B
R1
7.5
20
7.13…7.88
6
500
0.25
3
6
MM3Z5237B
X1
8.2
20
7.79…8.61
8
500
0.25
3
6.5
MM3Z5239B
Y1
9.1
20
8.65…9.56
10
600
0.25
3
7
MM3Z5240B
Z1
10
20
9.5…10.5
17
600
0.25
3
8
MM3Z5241B
A2
11
20
10.45…11.55
22
600
0.25
2
8.4
MM3Z5242B
B2
12
20
11.4…12.6
30
600
0.25
1
9.1
MM3Z5243B
C2
13
9.5
12.35…13.65
13
600
0.25
0.5
9.9
MM3Z5245B
D2
15
8.5
14.25…15.75
16
600
0.25
0.1
11
MM3Z5246B
E2
16
7.8
15.2…16.8
17
600
0.25
0.1
12
MM3Z5248B
F2
18
7
17.1…18.9
21
600
0.25
0.1
14
MM3Z5249B
N9
19
6.6
18.05…19.95
23
600
0.25
0.1
14
MM3Z5250B
H2
20
6.2
19…21
25
600
0.25
0.1
15
MM3Z5251B
J2
22
5.6
20.9…23.1
29
600
0.25
0.1
17
MM3Z5252B
K2
24
5.2
22.8…25.2
33
600
0.25
0.1
18
MM3Z5253B
P9
25
5
23.75…26.25
35
600
0.25
0.1
19
MM3Z5254B
M2
27
4.6
25.65…28.35
41
600
0.25
0.1
21
MM3Z5256B
N2
30
4.2
28.5…31.5
49
600
0.25
0.1
23
MM3Z5257B
P2
33
3.8
31.35…34.65
58
700
0.25
0.1
25
MM3Z5258B
R2
36
3.4
34.2…37.8
70
700
0.25
0.1
27
MM3Z5259B
X2
39
3.2
37.05…40.95
80
800
0.25
0.1
30
MM3Z5260B
Y2
43
3
40.85…45.15
93
900
0.25
0.1
33
MM3Z5261B
Z2
47
2.7
44.65…49.35
105
1000
0.25
0.1
36
MM3Z5262B
A3
51
2.5
48.45…53.55
125
1100
0.25
0.1
39
MM3Z5263B
B3
56
2.2
53.2…58.8
150
1300
0.25
0.1
43
MM3Z5265B
C3
62
2
58.9…65.1
185
1400
0.25
0.1
47
MM3Z5266B
D3
68
1.8
64.6…71.4
230
1600
0.25
0.1
52
MM3Z5267B
E3
75
1.7
71.25…78.75
270
1700
0.25
0.1
56
1)
VZ is tested with pulses (20 ms)
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z5221B~MM3Z5267B
Power Dissipation: Ptot (mW)
300
200
100
0
0
25
150
100
Ambient Temperature: Ta ( C)
O
Derating Curve
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z5221B~MM3Z5267B
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
A
D
E
bp
UNIT
A
bp
C
D
E
HE
mm
1.10
0.80
0.40
0.25
0.15
0.10
1.80
1.60
1.35
1.15
2.80
2.30
４
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５