NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3332 █ APPLICATIONS High Voltage switching Applications. █ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………700mW VCBO——Collector-Base Voltage………………………………180V VCEO——Collector-Emitter Voltage……………………………160V 1―Emitter，E 2―Collector，C 3―Base，B V EB O ——Emitter-Base Voltage………………………………6V IC——Collector Current…………………………………………0.7A ICP——Collector Current（Pulse）…………………………………1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 180 V IC=10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 160 V IC=1mA, BVEBO Emitter-Base Breakdown Voltage 6 V IE=10μA，IC=0 IB=0 ICBO Collector Cut-off Current 0.1 μA VCB=120V, IE=0 IEBO Emitter Cut-off Current 0.1 μA VEB=4V, IC=0 HFE(1) DC Current Gain 100 HFE(2) VCE=5V, IC=100mA 400 VCE=5V, IC=10mA 80 VCE(sat) Collector- Emitter Saturation Voltage 0.12 0.4 V IC=250mA, IB=25mA VBE(sat) Base-Emitter Saturation Voltage 0.85 1.2 V IC=250mA, IB=25mA Current Gain-Bandwidth Product 120 8 MHz pF 50 1000 60 nS nS nS fT Cob tON tSTG Output Capacitance Turn-on Time Storage tF Time Fall Time █ hFE Classification R 100—200 switching test Circuit： S T 140—280 200—400 VCE=10V, IC=50mA VCB=10V, IE=0 See specified test circuit NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3332