P NP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1020 █ POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………900mW VCBO——Collector-Base Voltage………………………………-50V 1―Emitter，E 2―Collector，C 3―Base，B VCEO——Collector-Emitter Voltage……………………………-50V V EBO ——Emitter-Base Voltage………………………………-5V I C ——Collector Current……………………………………-2mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -50 V IC=-1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -50 V IC=-10mA, BVEBO Emitter-Base Breakdown Voltage -5 V IE=-1mA，IC=0 IB=0 ICBO Collector Cut-off Current -100 nA VCB=-50V, IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V, IC=0 HFE(1) DC Current Gain 70 HFE(2) VCE=-2V, IC=-0.5A 240 VCE=-2V, IC=-1.5A 40 VCE(sat) Collector- Emitter Saturation Voltage -0.5 V IC=-1A, IB=-0.05A VBE(sat) Base-Emitter Saturation Voltage -1.2 V IC=-1A, IB=-0.05A fT Current Gain-Bandwidth Product 100 MHz Cob Output Capacitance 40 pF tON Turn-on Time 0.1 μS tSTG Storage 1.0 μS 0.1 μS tF Time Fall Time █ hFE Classification O Y 70—140 120—240 VCE=-2V, IC=-0.5A VCB=-10V, IE=0，f=1MHz Shantou Huashan Electronic Devices Co.,Ltd. H1020 Shantou Huashan Electronic Devices Co.,Ltd. H1020