Retour page principale PART NUMBER Fermionics Opto-Technology FD1500W Large Area InGaAs PIN Photodiodes diameter of active area=1.5 mm DESCRIPTION Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure. ABSOLUTE MAXIMUM RATINGS (T=25°C) PARAMETER RATING UNITS Storage Temperature -40 to +100 °C Operating Temperature -40 to +85 °C Forward Current 100 mA Reverse Current 20 mA Reverse Voltage 2 V OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C) PARAMETER SYMBOL Responsivity Shunt Resistance Capacitance R TEST CONDITIONS MIN TYP MAX λ = 850 nm 0.10 0.20 - λ = 1300 nm 0.80 0.90 - λ = 1550 nm 0.85 0.95 - UNITS A /W RS VR =0V 2 10 - MΩ C VR =0V - 300 450 pF Very High Shunt Resistance devices are available upon request. DIMENSIONAL OUTLINE (dimensions in inches) 1 ANODE 2 CATHODE 3 CASE PART NUMBER Fermionics Opto-Technology FD1500W Large Area InGaAs PIN Photodiodes TYPICAL CHARACTERISTICS Fig. 1 Spectral Response (R vs. λ) Responsivity, R (A/W) 10 1 0.1 0.01 0.001 800 1000 1200 1400 1600 1800 Wavelength, λ (nm) Fig. 2 Dark Current vs. Reverse Voltage Dark Current, ID (A) 10 -7 10-8 10-9 0 1 2 3 4 5 Reverse Voltage, VR (V) Fig. 3 Capacitance vs. Reverse Voltage Capacitance, C (pF) 1000 100 10 1 0 1 2 3 Reverse Voltage, VR (V) 4 5