8mm PIN PHOTODIODE MID-A841G Package Dimensions Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Unit: inches ( mm ) .310 (7.87) .300 (7.62) 1.35 (34.3) MINIMUM .075 (1.91) .070 (1.78) .218 (5.54) .208 (5.28) 45° .030 (0.76) R NOM. ANODE .332 (8.43) .320 (8.13) .200 (5.08) NOM. CATHODE Features l High photo sensitivity l Low junction capacitance l High cut-off frequency l Fast switching time l Acceptance viwe angle : 90° .020 (0.51) .377 (9.58) .357 (9.07) DIA. NOM. Chip Active Area : 0.017 in2 (11mm2) Absolute Maximum Ratings @ TA=25oC Parameter Maximum Rating o Unit o Operating Temperature Range -20 C to + 75 C Storage Temperature Range -20oC to + 75oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 12/06/2000 MID-A841G Optical-Electrical Characteristics Characteristic Sensitivity @ 10-8 To 10-2 W Test Conditions 880nm AXIS Temperature Coefficient Of Sensitivity @ 880nm Responsivity V=0V, 880nm Open Circuit Voltage H = 100 fc, 2850K Dark Current H = 0, VR = 10V Dark Current Temperature Coefficient H = 0 @ TA=25oC Symbol Min. Type . Max. Unit S AXIS 0.17 0.25 0.28 A/W TCS - - 0.2 %/oC Re 0.13 0.18 0.25 µW/cm2 VOC - 0.33 - V ID - 3 30 nA TC ID - +11 - %/oC µA Shunt Resistance H = 0, VF = 10mV RSH - 67 - MΩ RSH Temperature Coefficient H = 0, VF = 10mV TC RSH - -11 - %/oC Junction Capacitance H = 0, V = 0V, Freq=1MHZ CJ - 85 - pF λrange 400 - 1100 nm λP - 925 - nm VBR - 150 - V tr tf - 60 60 - nS - 13 30 35 18 35 45 26 40 50 DEG Spectral Application Range Spectral Response-Peak Breakdown Voltage H = 0, I = 0.1mA Response Time λ=940nm RL=10K OHMS I=2µA RISE 10 - 90% FALL 90 - 10% 90% OF MAX 70% OF MAX 50% OF MAX Angular Response Unity Opto Technology Co., Ltd. 12/6/2000