UOT MID-A841

8mm
PIN PHOTODIODE
MID-A841G
Package Dimensions
Description
Large area planar silicon photodiode mounted
on a two lead PC board substrate. A clear
molded lens is used to increase sensitivity.
Low junction capacitance permits fast
response time.
Unit: inches ( mm )
.310 (7.87)
.300 (7.62)
1.35 (34.3)
MINIMUM
.075 (1.91)
.070 (1.78)
.218 (5.54)
.208 (5.28)
45°
.030
(0.76)
R NOM.
ANODE
.332 (8.43)
.320 (8.13)
.200 (5.08)
NOM.
CATHODE
Features
l
High photo sensitivity
l
Low junction capacitance
l
High cut-off frequency
l
Fast switching time
l
Acceptance viwe angle : 90°
.020
(0.51)
.377 (9.58)
.357 (9.07)
DIA. NOM.
Chip Active Area : 0.017 in2 (11mm2)
Absolute Maximum Ratings
@ TA=25oC
Parameter
Maximum Rating
o
Unit
o
Operating Temperature Range
-20 C to + 75 C
Storage Temperature Range
-20oC to + 75oC
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
12/06/2000
MID-A841G
Optical-Electrical Characteristics
Characteristic
Sensitivity @ 10-8 To 10-2 W
Test Conditions
880nm AXIS
Temperature Coefficient Of
Sensitivity @ 880nm
Responsivity
V=0V, 880nm
Open Circuit Voltage
H = 100 fc, 2850K
Dark Current
H = 0, VR = 10V
Dark Current Temperature Coefficient H = 0
@ TA=25oC
Symbol
Min.
Type .
Max.
Unit
S
AXIS
0.17
0.25
0.28
A/W
TCS
-
-
0.2
%/oC
Re
0.13
0.18
0.25
µW/cm2
VOC
-
0.33
-
V
ID
-
3
30
nA
TC ID
-
+11
-
%/oC
µA
Shunt Resistance
H = 0, VF = 10mV
RSH
-
67
-
MΩ
RSH Temperature Coefficient
H = 0, VF = 10mV
TC RSH
-
-11
-
%/oC
Junction Capacitance
H = 0, V = 0V,
Freq=1MHZ
CJ
-
85
-
pF
λrange
400
-
1100
nm
λP
-
925
-
nm
VBR
-
150
-
V
tr
tf
-
60
60
-
nS
-
13
30
35
18
35
45
26
40
50
DEG
Spectral Application Range
Spectral Response-Peak
Breakdown Voltage
H = 0, I = 0.1mA
Response Time λ=940nm
RL=10K OHMS I=2µA
RISE 10 - 90%
FALL 90 - 10%
90% OF MAX
70% OF MAX
50% OF MAX
Angular Response
Unity Opto Technology Co., Ltd.
12/6/2000