Inchange Semiconductor Product Specification 2N6688 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・Designed for high-power switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 20 A ICM Collector current-peak 50 A PC Collector power dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6688 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltage IC=20A; IB=2A 1.5 V VBEsat Base-emitter saturation voltage IC=20A; IB=2A 1.8 V ICEV Collector cut-off current VCE=300V; VBE=-1.5V 50 μA IEBO Emitter cut-off current VEB=8V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=2V 25 hFE-2 DC current gain IC=10A ; VCE=2V 20 hFE-3 DC current gain IC=20A ; VCE=2V 15 Transition frequency IC=1A ; VCE=10V 20 fT CONDITIONS 2 MIN TYP. MAX 200 UNIT V 80 100 MHz Inchange Semiconductor Product Specification 2N6688 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3