Inchange Semiconductor Product Specification 2N6258 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 电半 Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO PARAMETER CONDITIONS UNIT 100 V Open base 80 V Open collector 5 V 30 A 7.5 A 250 W D N O IC Collector-base voltage Open emitter M E S NG VCEO Collector-emitter voltage VEBO Emitter-base voltage R O T UC VALUE A H C IN IC Collector current IB Base current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6258 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltge IC=7.5A ;IB=0.75A 1.0 V VBEsat Base-emitter saturation voltage IC=7.5A ;IB=0.75A 1.3 V ICEO Collector cut-off current VCE=40V; IB=0 1.0 mA ICEV Collector cut-off current VCE=100V; VBE(off)=1.5V TC=150℃ 0.1 5.0 mA ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE fT 体 导 电半 固 DC current gain IC=15A ; VCE=2V Transition frequency IC=1A;VCE=10V N O C I M E S NG A H C IN 2 80 UNIT V R O T DUC 20 0.8 MHz Inchange Semiconductor Product Specification 2N6258 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA R O T DUC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3