Inchange Semiconductor Product Specification 2N6216 2N6217 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current ,high power dissipation APPLICATIONS ・For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 电半 Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO PARAMETER VEBO D N O C I M E 2N6216 Collector-base voltage Open emitter 2N6217 VCEO NG S CHA 2N6216 Collector-emitter voltage IN R O T UC CONDITIONS VALUE 200 Emitter-base voltage Open collector V 180 150 Open base 2N6217 UNIT V 140 7 V 10 A 71 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.46 ℃/W TC=100℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6216 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 150 IC=0.1A ;IB=0 2N6217 V 140 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.75A 1.6 V Base-emitter saturation voltage IC=6A; IB=0.75A 2.0 V 5.0 mA VBEsat 2N6216 ICEO 2N6217 ICBO IEBO hFE fT VCE=80V; IB=0 Collector cut-off current 体 导 电半 Collector cut-off current 固 Emitter cut-off current VCE=70V; IB=0 VCB=RatedVCBO; IE=0 N O C EMI VEB=7V; IC=0 S G N HA DC current gain IC=5A ; VCE=5V INC IC=1A ; VCE=10V Transition frequency 2 R O T DUC 20 1.0 mA 1.0 mA 80 20 MHz Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 PACKAGE OUTLINE 体 导 电半 固 N O C EMI S G N HA INC R O T DUC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3