Inchange Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO PARAMETER CONDITIONS D N O IC 2N6326 Collector-base voltage M E S E 2N6327 G N A CH Open emitter 2N6328 VCEO VEBO IN Collector-emitter voltage 2N6326 2N6327 Open base 2N6328 Emitter-base voltage VALUE UNIT 60 80 V 100 60 80 V 100 Open collector 5 V IC Collector current 30 A IB Base current 7.5 A PD Total power dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6326 VCEO(SUS) Collector-emitter sustaining voltage 2N6327 MIN TYP. MAX UNIT 60 IC=0.2 A ;IB=0 V 80 100 2N6328 VCEsat Collector-emitter saturation voltage IC=15A; IB=1.5A 1.2 V VBEsat Base-emitter saturation voltage IC=15A; IB=1.5A 1.5 V Base-emitter on voltage IC=8A ; VCE=4V 1.5 V 2N6326 VCB=60V; IE=0 TC=150℃ 1.0 5.0 2N6327 VCB=80V; IE=0 TC=150℃ 2N6328 VCB=100V; IE=0 TC=150℃ VBE ICBO 体 半导 固电 Collector cut-off current Emitter cut-off current hFE-1 DC current gain hFE-2 fT IN OND IC M E ES G N A CH IEBO VEB=4V; IC=0 R O T UC 1.0 5.0 IC=8A ; VCE=4V 25 DC current gain IC=30A ; VCE=4V 6 Transition frequency IC=1A ; VCE=10V;f=1.0MHz 3 2 mA 1.0 5.0 1.0 mA 30 MHz Inchange Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3