MUR840, MUR860, RURP840, RURP860 Data Sheet January 2002 8A, 400V - 600V Ultrafast Diodes Features The MUR840, MUR860, RURP840 and RURP860 are low forward voltage drop ultrafast recovery rectifiers (trr < 60ns). They use a glass-passivated ion-implanted, epitaxial construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <60ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V These devices are intended for use as output rectifiers and flywheel diodes in a variety of high-frequency pulse-width modulated switching regulators. Their low stored charge and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors. • Avalanche Energy Rated Formerly developmental type TA09616. • General Purpose Ordering Information Packaging PART NUMBER PACKAGE • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits JEDEC TO-220AC BRAND MUR840 TO-220AC MUR840 RURP840 TO-220AC RURP840 MUR860 TO-220AC MUR860 RURP860 TO-220AC RURP860 ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 155oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG ©2002 Fairchild Semiconductor Corporation MUR840 RURP840 400 400 400 MUR860 RURP860 600 600 600 UNITS V V V 8 8 A 16 16 A 100 100 A 75 20 -65 to 175 75 20 -65 to 175 W mJ oC 300 260 300 260 oC oC MUR840, MUR860, RURP840, RURP86 Rev. B MUR840, MUR860, RURP840, RURP860 Electrical Specifications TC = 25oC, Unless Otherwise Specified MUR840, RURP840 SYMBOL MIN TYP MAX MIN TYP MAX UNITS IF = 8A - - 1.3 - - 1.5 V IF = 8A, TC = 150oC - - 1.0 - - 1.2 V VR = 400V - - 100 - - - µA VR = 600V - - - - - 100 µA VR = 400V, TC = 150oC - - 500 - - - µA VR = 600V, TC = 150oC - - - - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 60 - - 60 ns IF = 8A, dIF/dt = 200A/µs - - 70 - - 70 ns ta IF = 8A, dIF/dt = 200A/µs - 32 - - 32 - ns tb IF = 8A, dIF/dt = 200A/µs - 21 - - 21 - ns QRR IF = 8A, dIF/dt = 200A/µs - 195 - - 195 - nC VR = 10V, IF = 0A - 25 - - 25 - pF 2 oC/W VF IR trr CJ TEST CONDITION MUR860, RURP860 RθJC - - 2 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 500 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 40 10 100oC 175oC 1 175oC 100 100oC 10 1 25oC 0.1 25oC 0.5 0 0.5 1 1.5 2 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2002 Fairchild Semiconductor Corporation 2.5 0.01 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE MUR840, MUR860, RURP840, RURP86 Rev. B MUR840, MUR860, RURP840, RURP860 Typical Performance Curves (Continued) 100 60 TC = 100oC, dIF/dt = 200A/µs TC = 25oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 50 40 trr 30 ta 20 tb 10 0 0.5 1 trr 60 40 ta tb 20 0 0.5 8 4 80 1 IF , FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/µs 100 trr 75 ta tb 25 0 0.5 1 8 FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 125 50 4 IF , FORWARD CURRENT (A) 4 8 DC 6 SQ. WAVE 4 2 0 140 145 150 155 160 165 170 175 8 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 100 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE ©2002 Fairchild Semiconductor Corporation MUR840, MUR860, RURP840, RURP86 Rev. B MUR840, MUR860, RURP840, RURP860 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE CURRENT SENSE IF + - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS I = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD Q1 IL IL I V VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS MUR840, MUR860, RURP840, RURP86 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4