ISC 2SC4508

Inchange Semiconductor
Product Specification
2SC4508
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High breakdown voltage
・High speed switching performance
APPLICATIONS
・For switching regulator and general
purpose power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
10
A
40
W
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC4508
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustainig voltage
IC=100mA ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.2
V
ICBO
Collector cut-off current
VCB=450V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
25
hFE-2
DC current gain
IC=4A ; VCE=5V
20
2
65
Inchange Semiconductor
Product Specification
2SC4508
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3