Inchange Semiconductor Product Specification 2SC4508 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High speed switching performance APPLICATIONS ・For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 10 A 40 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4508 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustainig voltage IC=100mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 25 hFE-2 DC current gain IC=4A ; VCE=5V 20 2 65 Inchange Semiconductor Product Specification 2SC4508 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3