Inchange Semiconductor Product Specification 2SC2970 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High voltage, high speed ·Low saturation voltage APPLICATIONS ·For switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V 5 A 40 W IC Collector current PT Total power dissipation Tj Junction temperature 175 ℃ Tstg Storage temperature -55~175 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2970 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=300V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=2A ; VCE=5V 2 MIN 15 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SC2970 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3