Inchange Semiconductor Product Specification 2SC3158 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage ・High switching speed APPLICATIONS ・For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER D N O IC R O T UC VALUE UNIT Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 7 V EM S E G N A H Collector-base voltage INC CONDITIONS IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 3 A PC Collector dissipation Ta=25℃ 1. 5 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3158 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.2 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 hFE-2 体 导 半 CONDITIONS 固电 DC current gain DC current gain IC=4A ; VCE=5V 2 TYP. MAX R O T UC 10 OND C I M E SE G N A CH IN IC=1A ; VCE=5V MIN 20 10 80 UNIT μA Inchange Semiconductor Product Specification 2SC3158 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions 3 R O T UC