isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V 1.5 A IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5248 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 160 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.0 V ICBO Collector Cutoff Current VCB= 160V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 μA hFE DC Current Gain IC= 0.1A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 150 MHz Output Capacitance IE= 0; VCB= 10V; f= 1MHz 20 pF fT COB CONDITIONS B E 60-120 100-200 isc Website：www.iscsemi.cn TYP. B hFE Classifications D MIN 2 60 MAX UNIT 200