ISC 2SB695

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB695
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SD731
APPLICATIONS
·Designed for power amplifier and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-170
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
PC
Collector Power Dissipation
@ TC=25℃
80
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB695
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -30mA; IB= 0
-120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
-170
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
-1.5
V
VBE(on)
Base -Emitter On Voltage
IC= -1A; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -170V; IE=0
-50
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-50
μA
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
40
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
20
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
Current-Gain—Bandwidth Product
IC=-1A; VCE= -5V
fT
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
B
2
MAX
UNIT
200
350
pF
7
MHz