isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB691 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD727 APPLICATIONS ·Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB691 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -130 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V VBE(on) Base -Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -130V; IE=0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 40 hFE-2 DC Current Gain IC= -3A; VCE= -5V 20 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz Current-Gain—Bandwidth Product IC=-1A; VCE= -5V fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B 2 MAX UNIT 200 190 pF 7 MHz