isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION ·Collector-Emitter Breakdown Voltage:V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous 0.5 A Collector Power Dissipation @ Ta=25℃ 1.5 Collector Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -55~150 ℃ B W PC TJ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2073 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 10V 0.85 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 500mA ; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 35 pF Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V 4 MHz fT isc Website：www.iscsemi.cn 2 40 140