isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD380 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 7 A IBM Base Current-Peak 3.5 A PC Collector Power Dissipation @ TC≤90℃ 50 W TJ Junction Temperature 130 ℃ -65~130 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD380 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 10 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.6 V VCB= 750V ; IE= 0 100 μA VCB= 1500V ; IE= 0 1 mA ICBO hFE tf 5 UNIT V B B Collector Cutoff Current DC Current Gain IC= 5A ; VCE= 10V 5 15 Fall Time 0.9 μs IC= 5A, IBend= 1.5A, LB= 5μH tstg Storage Time isc Website：www.iscsemi.cn 11 2 μs