isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage w VALUE UNIT 1200 V 800 V 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A Base Current-Continuous 3 A IB B Collector Power Dissipation @ TC=25℃ 100 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3737 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 2.0 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 2A; VCE= 5V Turn-On Time tstg Storage Time B tf Fall Time s c s i . w w w isc Website：www.iscsemi.cn 6 n c . i m e IC= 2A; IB1= 0.4A, IB2= -0.8A; VCC= 250V 2 TYP. MAX 800 B Switching times ton MIN UNIT V 20 1.0 μs 3.5 μs 0.3 μs