isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1850 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i ww w n c . i m e UNIT 1500 V 1500 V 700 V 7 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 20 A IB Base Current- Continuous 3 A Collector Power Dissipation @Ta=25℃ 3 B PC Tj Tstg W Collector Power Dissipation @TC=25℃ 120 Junction Temperature 150 ℃ -55-150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1850 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A 1.5 V hFE-1 DC Current Gain IC= 1A; VCE= 5V 5 hFE-2 DC Current Gain IC= 6A; VCE= 5V 4.5 B Collector Cutoff Current m e s isc VCB= 1500V; IE= 0 fT . w w Transition Frequency Switching Times, Resistive Load w ts Storage Time tf Fall Time isc Website：www.iscsemi.cn V B VCB= 1000V; IE= 0 ICBO 7 UNIT IC= 1A; VCE= 10V n c . i 25 10 μA 1.0 mA 2 MHz 1.5 μs 0.2 μs IC= 6A; IB1= 1.5A; IB2= -3A, VCC= 200V