Inchange Semiconductor Product Specification BU102 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・VCEO(sus)=150V (min) APPLICATIONS ・Designed for horizontal deflection output stage of CTV receivers PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 6 V 7 A 100 W IC Collector current PC Collectorl power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BU102 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown votage V(BR)CBO MIN TYP. MAX UNIT 150 V IE=1mA; IC=0 6 V Collector-base breakdown votage IC=1mA; IE=0 400 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.0 A 2.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.0 A 2.5 V ICBO Collector cut-off current VCB=400V; IE=0 0.1 mA ICEO Collector cut-off current VCE=100V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 2 30 120 Inchange Semiconductor Product Specification BU102 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3