Inchange Semiconductor Product Specification 2SD350A Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For color TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 7 A PT Total power dissipation 22 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=90℃ Inchange Semiconductor Product Specification 2SD350A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 700 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2A 1.3 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4A ; VCE=10V 3 2 MIN TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD350A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3