ISC 2SD250A

Inchange Semiconductor
Product Specification
2SD350A
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For color TV horizontal deflection
output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
ICM
Collector current-peak
7
A
PT
Total power dissipation
22
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=90℃
Inchange Semiconductor
Product Specification
2SD350A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
700
V
V(BR)EBO
Emitter-base breakdown votage
IE=10mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=4.5 A;IB=2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5 A;IB=2A
1.3
V
ICBO
Collector cut-off current
VCB=800V;IE=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=4A ; VCE=10V
3
2
MIN
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SD350A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3