ISC 2SC3756

Inchange Semiconductor
Product Specification
2SC3756
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High speed
·High breakdown voltage
·High reliability
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
6
A
IC
PC
Collector current
Ta=25℃
3.0
TC=25℃
60
Collector dissipation
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3756
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=1A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
10
μA
ICES
Collector cut-off current
VCE=1500V; RBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=4V ;IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=4A ; VCE=5V
4
2
MIN
TYP.
MAX
800
UNIT
V
36
Inchange Semiconductor
Product Specification
2SC3756
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3