Inchange Semiconductor Product Specification 2SC508 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS ・For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V 4 A 25 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC508 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V ICBO Collector cut-off current VCB=180V;IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=4A ; VCE=5V 2 MIN 20 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SC508 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3