ISC BU606

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU606
DESCRIPTION
·High Voltage: VCEV= 400V(Min)
·Fast Switching Speed: tf= 0.75μs(Max)
·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEV
Collector-Emitter Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Peak Repetitive
10
A
ICP
Collector Current- Peak (10ms)
15
A
IB
Base Current
4
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU606
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.2
V
ICES
Collector Cutoff Current
VCE= 400V; VBE= 0
VCE=250V; VBE= 0
VCE=250V; VBE= 0;TC= 150℃
5.0
0.1
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0
mA
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V, ftest= 20MHz
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
Fall Time
IC= 5A; IB1= -IB2= 0.5A, L= 150μH
VCC= 40V
fT
COB
tf
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
200
UNIT
V
B
B
2
MAX
10
MHz
80
pF
0.75
μs