isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU407H DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE Collector Current-Continuous ICP n c . i m e 330 V s c s .i 330 150 w w w IC UNIT 6 V V V 7 A Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 2.08 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU407H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.8A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.8A 1.2 V ICES Collector Cutoff Current VCE= 330V; VBE= 0 VCE= 200V; VBE= 0 5.0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V fT COB tf w isc Website：www.iscsemi.cn MIN TYP. n c . i m e s c is IC= 5A; IBend= 0.8A, VCC= 40V 2 UNIT V B IE= 0; VCB= 10V; ftest= 1.0MHz MAX 150 B . w w Output Capacitance Fall Time CONDITIONS 10 MHz 80 pF 0.75 μs