isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor S2056 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1500 V VCER Collector-Emitter Voltage RBE= 100Ω 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V 2.5 A 3 A IC Collector Current ICM Collector Current-peak IB Base Current 0.1 A PC Collector Power Dissipation @ TC≤90℃ 10 W TJ Junction Temperature 115 ℃ -65~115 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor S2056 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 95 pF fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 3 MHz tf Fall Time IC= 2A; IB(end)= 1A 0.75 μs isc Website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT 700 V 5 V B B 2