isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD822 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 6A APPLICATIONS ·Designed for color TV horizontal output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 1500 V 600 V 5 V IC Collector Current- Continuous 7 A IE Emitter Current- Continuous -7 A PC Collector Power Dissipation @ TC≤90℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD822 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) CONDITIONS MAX UNIT IC= 6A; IB= 1.2A 5.0 V Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz Current-Gain—Bandwidth Product tf Fall Time w isc Website：www.iscsemi.cn TYP. B B 8 n c . i m e s c is . w w fT MIN IC= 0.1A; VCE= 10V IC= 6A, IBend= 1.2A 2 165 pF 3 MHz 1.0 μs