isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT22B/C DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)- BUT22B 450V(Min)- BUT22C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector-Emitter Voltage VBE= 0 VALUE BUT22B UNIT 750 V BUT22C 850 BUT22B 400 BUT22C 450 Collector-Emitter Voltage V Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT22B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS BUT22B VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage TYP. MAX V B BUT22B UNIT 400 IC= 0.1A ;IB= 0; L= 25mH BUT22C VCE(sat) MIN 450 IC= 6A; IB= 0.8A 1.5 B V BUT22C IC= 6A; IB= 1.0A 1.5 BUT22B IC= 6A; IB= 0.8A 1.5 BUT22C IC= 6A; IB= 1.0A 1.5 B B V B ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC=0 10 mA hFE DC Current Gain IC= 1A ; VCE= 5V 1.0 μs 4.5 μs 0.7 μs 25 Switching Times; Resistive Load ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn For BUT22B IC= 6A; IB1= -IB2= 0.8A For BUT22C IC= 6A; IB1= -IB2= 1.0A 2