isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX46/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUX46 450V (Min)-BUX46A APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUX46 850 BUX46A 1000 BUX46 400 BUX46A 450 UNIT V V Emitter-Base Voltage 5 V 3.5 A 5 A 1.5 A IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current IBM Base Current-Peak 3 A PC Collector Power Dissipation @TC=25℃ 85 W Tj Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX46/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX46 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 400 IC= 0.2A ; IB= 0; L= 25mH V 450 BUX46A V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5A ; IC= 0 30 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.7A 5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.3 V ICER Collector Cutoff Current VCE=VCESmax;RBE≤10Ω VCE=VCESmax;RBE≤10Ω;TJ=124℃ 0.3 2 mA ICEX Collector Cutoff Current VCE=VCESmax;VBE=-2.5V VCE=VCESmax;VBE=-2.5V;TJ=124℃ 0.1 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE DC Current Gain IC= 1A ; VCE= 5V VBE(sat) 15 50 Switching Times , Resistive Load ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2.5A ;IB1= -IB2= 0.5A 0.5 1.0 μs 1.5 3.0 μs 0.5 0.8 μs