isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5089 DESCRIPTION ·High Collector-Base Voltage: VCBO = 1500V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5089 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= 6A; IB= 1.5A 5.0 V Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC=0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 6A; VCE= 5V 5 Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V fT CONDITIONS MIN TYP. B B 3 MHz Switching Times ts Storage Time 3.0 μs 0.2 μs IC= 6A; IB1= 1.2A; IB2= -2.4A; VCC= 200V tf Fall Time isc Website：www.iscsemi.cn 2