isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5387 DESCRIPTION ·High Breakdown Voltage: VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A ICM Collector Current- Pulse 20 A IB Base Current- Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5387 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A 1.5 V ICBO Collector Cutoff Current VCB= 1200V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 15 35 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 4.3 7.8 Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1.7 MHz COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 130 pF tstg Storage Time fT CONDITIONS MIN TYP. MAX 600 UNIT V B B 2.5 3.5 μs 0.15 0.3 μs ICP= 6A , IB1(end)= 1.2A;fH= 64kHz tf Fall Time isc Website：www.iscsemi.cn 2