ISC KSC5086

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
KSC5086
DESCRIPTION
·High Collector-Base Voltage: VCBO = 1500V(Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for use in high definition color display
horizontal deflection output application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
16
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
KSC5086
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 250mA; IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
1.5
V
ICES
Collector Cutoff Current
VCE= 1400V; RBE= 0
1
mA
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
40
200
mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
VECF
C-E Diode Forward Voltage
IF= 6A
2.0
V
Fall Time
IC= 4A; IB1= 0.8A; IB2= -1.6A;
VCC= 200V; RL= 50Ω
0.2
μs
tf
isc Website:www.iscsemi.cn
6
UNIT
B
B
2
V