IXYS DSS17-06CR

DSS 17-06CR
HiPerDynTM Schottky Diode
IFAV = 17 A
VRRM = 600 V
trr
= 45 ns
(Electrically Isolated Back Surface)
Preliminary Data
VRSM
VRRM
V
V
600
600
Type
A
C
ISOPLUS 247TM
C
DSS 17-06CR
A
Isolated back surface *
A = Anode, C = Cathode
* Patent pending
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
IFRM
TC = 95°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
50
17
tbd
A
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
200
A
EAS
TVJ = 25°C; non-repetitive
IAS = 2 A; L = 180 µH
tbd
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
tbd
A
-55...+175
175
-55...+150
°C
°C
°C
105
W
2500
V~
20...120
N
6
g
TVJ
TVJM
Tstg
Features
●
●
●
●
●
Ptot
TC = 25°C
VISOL
50/60 Hz RMS; IISOL ≤ 1 mA
FC
mounting force with clip
Weight
typical
●
●
●
●
●
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<25pF)
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Isolated and UL registered E153432
Applications
●
IR
①
VF ②
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
IF = 15 A;
TVJ = 125°C
TVJ = 25°C
RthJC
RthCH
0.5
5
mA
mA
2.71
3.32
V
V
1.4
K/W
K/W
0.25
●
●
●
●
●
●
●
trr
IF = 10 A; -di/dt = 100 A/µs;
VR = 100 V; TVJ = 25°C
45
ns
IRM
VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs
TVJ = 25°C
4.0
A
Advantages
●
●
●
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
048
Symbol
1-2
DSS 17-06CR
100
1000
10
mA
A
TVJ=175°C
pF
1 150°C
IR
IF
CT
125°C
0.1
100°C
10
TVJ =
175°C
150°C
125°C
25°C
100
0.01 75°C
50°C
0.001
25°C
1
0
1
2
3
4
V 5
0
400 V
VR
200
VF
Fig. 1 Maximum forward voltage
drop characteristics
TVJ= 25°C
10
0.0001
0
600
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
200
400
V
VR
600
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
70
W
60
30
A
25
P(AV)
IF(AV)
A
50
IFSM
20
DC
d=0.5
15
d=
DC
0.5
0.33
0.25
0.17
0.08
40
30
10
20
5
10
0
0
0
40
120 °C 160
80
0
5
10
15
TC
Fig. 4 Average forward current IF(AV)
versus case temperature TC
20
IF(AV)
25 A
µs
tP
Fig. 5 Forward power loss
characteristics
2
1
K/W
ZthJC
D=0.5
0.33
0.25
0.17
0.1
0.08
Single Pulse
0.01
0.0001
DSS17-06CR
0.001
0.01
0.1
1
s
10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
© 2000 IXYS All rights reserved
Note: All curves are per diode
2-2