DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns (Electrically Isolated Back Surface) Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings IFRMS IFAVM IFRM TC = 95°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 50 17 tbd A A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A EAS TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH tbd mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive tbd A -55...+175 175 -55...+150 °C °C °C 105 W 2500 V~ 20...120 N 6 g TVJ TVJM Tstg Features ● ● ● ● ● Ptot TC = 25°C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC mounting force with clip Weight typical ● ● ● ● ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432 Applications ● IR ① VF ② Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM IF = 15 A; TVJ = 125°C TVJ = 25°C RthJC RthCH 0.5 5 mA mA 2.71 3.32 V V 1.4 K/W K/W 0.25 ● ● ● ● ● ● ● trr IF = 10 A; -di/dt = 100 A/µs; VR = 100 V; TVJ = 25°C 45 ns IRM VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs TVJ = 25°C 4.0 A Advantages ● ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf 048 Symbol 1-2 DSS 17-06CR 100 1000 10 mA A TVJ=175°C pF 1 150°C IR IF CT 125°C 0.1 100°C 10 TVJ = 175°C 150°C 125°C 25°C 100 0.01 75°C 50°C 0.001 25°C 1 0 1 2 3 4 V 5 0 400 V VR 200 VF Fig. 1 Maximum forward voltage drop characteristics TVJ= 25°C 10 0.0001 0 600 Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 200 400 V VR 600 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 70 W 60 30 A 25 P(AV) IF(AV) A 50 IFSM 20 DC d=0.5 15 d= DC 0.5 0.33 0.25 0.17 0.08 40 30 10 20 5 10 0 0 0 40 120 °C 160 80 0 5 10 15 TC Fig. 4 Average forward current IF(AV) versus case temperature TC 20 IF(AV) 25 A µs tP Fig. 5 Forward power loss characteristics 2 1 K/W ZthJC D=0.5 0.33 0.25 0.17 0.1 0.08 Single Pulse 0.01 0.0001 DSS17-06CR 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles © 2000 IXYS All rights reserved Note: All curves are per diode 2-2