DSEC 60-06A DSEC 60-06B HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 600 V trr = 30/35 ns with common cathode and soft recovery VRSM VRRM V V 600 600 600 600 TO-247 AD Type DSEC 60-06A DSEC 60-06B A C A C A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM Both Versions Maximum Ratings Conditions 70 30 rect., d = 0.5; TC (Vers. A) = 135°C TC (Vers. B) = 125°C A A Features IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 250 A EAS TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH 0.2 mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 165 W ● ● ● ● IAR TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.8...1.2 6 ● ● ● Applications Nm g ● ● ● Symbol IR ① VF ② Conditions Characteristic max. Values Vers. A Vers. B TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 250 1 250 2 mA mA IF = 30 A; 1.25 1.60 1.56 2.51 V V 0.9 0.25 0.9 0.25 K/W K/W typ. 35 typ. 30 ns typ. 6 typ. 4 A ● ● ● TVJ = 150°C TVJ = 25°C RthJC RthCH trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100°C ● ● Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 008 Data according to IEC 60747 and per diode unless otherwise specified 1-3 DSEC 60-06A 70 A 60 3000 50 T = 100°C nC VVJ = 300V R 2500 T = 100°C A VVJ = 300V R IRM Qr IF 50 TVJ=150°C 2000 TVJ=100°C 1500 IF= 60A IF= 30A IF= 15A 40 30 40 IF= 60A IF= 30A IF= 15A 30 20 1000 20 TVJ=25°C 0 0.0 0.5 1.0 1.5 VF 10 500 10 0 100 V2.0 Fig. 1 Forward current IF versus VF A/ms 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 130 120 400 ms 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.2 µs VFR tfr 0.9 IF= 60A IF= 30A IF= 15A 110 1.0 200 V VFR tfr 15 trr Kf 0 20 TVJ= 100°C VR = 300V ns 1.5 0 100 10 0.6 5 0.3 I RM 90 0.5 Qr 80 0.0 TVJ= 100°C IF = 30A 70 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396 0.01 0.001 0.00001 DSEP30-06A DSEC60-06A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 008 Fig. 7 Transient thermal resistance junction to case 2-3 DSEC 60-06B 60 A 1000 50 IF TVJ= 100°C VR = 300V A 25 800 Qr 600 IF= 60A IF= 30A IF= 15A IRM IF= 60A IF= 30A IF= 15A 40 TVJ=150°C 30 TVJ= 100°C VR = 300V nC 20 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 2 5 0 100 3 V A/ms 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 TVJ= 100°C VR = 300V ns 200 ms 1000 600 A/ 800 -diF/dt 400 Fig. 3 Peak reverse current IRM versus -diF/dt 1.00 TVJ= 100°C IF = 30A V VFR 15 trr Kf 0 20 90 1.5 0 µs tfr 0.75 V FR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 I RM 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.00 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396 0.01 0.001 0.00001 DSEC 60-06B 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 008 Fig. 7 Transient thermal resistance junction to case 3-3